Compound semiconductor device and electric power converting apparatus using such device

A semiconductor device in an electric power converting apparatus comprised of a plurality of circuits each of which include at least a pair of switching devices serially connected between DC terminals, wherein said plurality of circuits which correspond in number to the number of phases on an AC side associated with the power converting apparatus are connected in parallel, wherein AC terminals associated with the power converting apparatus are led out from midpoints of the serially connected switching devices of each of said plurality of circuits, and wherein each of said switching devices comprises:

• a semiconductor substrate which is comprised of a first semiconductor region of a first conductivity type adjacent to a first main surface of the semiconductor substrate, a second semiconductor region of a second conductivity type that is adjacent to the first semiconductor region and a second main surface of the semiconductor substrate and which has a carrier density lower than that of the first semiconductor region, third and fourth semiconductor regions of the first conductivity type which extend from the second main surface into the second semiconductor region and which are separated from one another by the second semiconductor region and each of which has a carrier density higher than that of the second semiconductor region, a fifth semiconductor region of the second conductivity type which extends from the second main surface into the third semiconductor region and which has a carrier density higher than that of the third semiconductor region, sixth and seventh semiconductor regions of the second conductivity type which extend from the second main surface into the fourth semiconductor region and which are separated from one another by the fourth semiconductor region, and an eighth semiconductor region of the first conductivity type which connects the third semiconductor region with the fourth semiconductor region, wherein each of said sixth and seventh semiconductor regions has a carrier density higher than that of said second semiconductor region;
• a first main electrode coupled to the first semiconductor region;
• a second main electrode coupled to the fourth and seventh semiconductor regions;
• a first insulating gate electrode provided on the second main surface of the semiconductor substrate so as to lie over the second, third, and fifth semiconductor regions;
• a second insulating gate electrode provided on the second main surface of the semiconductor substrate so as to lie over the sixth, fourth, and seventh semiconductor regions;
• first means for mutually electrically connecting the first and second insulating gate electrodes;
• and
• second means for mutually electrically connecting the fifth and sixth semiconductor regions, wherein the second means is not in contact with the third semiconductor region.

A compound semiconductor device comprising:

• A semiconductor substrate which is comprised of a first semiconductor region of a first conductivity type adjacent to a first main surface of the semiconductor substrate, a second semiconductor region of a second conductivity type which is adjacent to said first semiconductor region and to a second main surface of the semiconductor substrate and which has a carrier density lower than that of said first semiconductor region, third and fourth semiconductor regions of the first conductivity type which extend from the second main surface into said second semiconductor region and which are separated from one another by the second semiconductor region and each of which has a carrier density higher than that of the second semiconductor region, a fifth semiconductor region of the second conductivity type which extends from the second main surface into said third semiconductor region and which has a carrier density higher than that of said third semiconductor region, and sixth and seventh semiconductor regions of the second conductivity type which extend from the second main surface into said fourth semiconductor region and which are separated from one another by said fourth semiconductor region, an eighth semiconductor region of the first conductivity type which connects the third semiconductor region with the fourth semiconductor region, wherein each of said sixth and seventh regions has a carrier density higher than that of said second semiconductor region;
• a first main electrode which is in ohmic contact with said first semiconductor region on the first main surface of the semiconductor substrate;
• a second main electrode which is in ohmic contact with said fourth and seventh semiconductor regions on the second main surface of the semiconductor substrate;
• a first insulating gate electrode provided on the second main surface of the semiconductor substrate so as to lie over the second, third, and fifth semiconductor regions;
• a second insulating gate electrode provided on the second main surface of the semiconductor substrate so as to lie over the sixth, fourth, and seventh semiconductor regions;
• first means for mutually electrically connecting said first and second insulating gate electrodes;
• and
• second means for mutually electrically connecting the fifth and sixth semiconductor regions, wherein the second means is not in contact with the third semiconductor region.

An electric power converting apparatus in which a plurality of circuits are each formed by serially connecting at least a pair of switching devices between DC terminals, wherein a plurality of said circuits which is an integer times as large as the number of phases on an AC side of the electric power converting apparatus are connected in parallel and wherein AC terminals are led out from middle points of the switching devices which are serially connected to form said circuits, wherein each of said switching devices comprises:

• a semiconductor substrate wich is comprised of a first semiconductor region of a first conductivity type adjacent to a first main surface, a second semiconductor region of a second conductivity type which is adjacent to said first semiconductor region and to a second main surface and which has a carrier density lower than that of said first semiconductor region, third and fourth semiconductor regions of the first conductivity type which extend from the second main surface into said second semiconductor region and which are separated from one another by the second semiconductor region and each of which has a carrier density higher than that of the second semiconductor region, a fifth semiconductor region of the second conductivity type which extends from the second main surface into said third semiconductor region and which has a carrier density higher than that of said third semiconductor region, and sixth and seventh semiconductor regions of the second conductivity type which extend from the second main surface into said fourth semiconductor region and which are separated from one another by said fourth semiconductor region, wherein each of said sixth and seventh regions has a carrier density higher than that of said second semiconductor region;
• a first main electrode which is in ohmic contact with said first semiconductor region on the first main surface of the semiconductor substrate;
• a second main electrode which is in ohmic contact with said fourth and seventh semiconductor regions on the second main surface of the semiconductor substrate;
• a first insulating gate electrode provided on the second main surface of the semiconductor substrate so as to lie over the second, third, and fifth semiconductor regions;
• a second insulating gate electrode provided on the second main surface of the semiconductor substrate so as to lie over the sixth, fourth and seventh semiconductor regions;
• first means for mutually electrically connecting said first and second insulating gate electrodes;
• and
• second means for mutually electrically connecting the fifth and sixth semiconductor regions, wherein the second means is not in contact with the third semiconductor region.