III-V system compound semiconductor device and method for manufacturing the semiconductor device
AssigneeFujitsu Limited
InventorsTakeshi Tomioka, Hideyasu Ando, Naoya Okamoto, Shinji Yamaura
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Abstract
The invention relates to a method for manufacturing a III-V system compound semiconductor device, provides such a new C dopant as alkyl halide (CH.sub.2 I.sub.2 for example) containing carbon (C), iodine (I), and hydrogen (H) for giving a highly p-type conductivity to a GaAs crystal layer, an InGaAs crystal layer or the like as an object of it, and includes a process of forming a p-type III-V system compound semiconductor layer as using a compound containing carbon (C) as a dopant material for giving a p-type conductivity and further containing iodine (I) and hydrogen (H) as impurity.
Claims4
A III-V system compound semiconductor device comprising a III-V system compound semiconductor layer, which is at least 10.sup.18 /cm.sup.3 in density of positive holes, containing carbon as impurity for giving a p-type conductivity, and further containing iodine and hydrogen as impurity.
Dependencies are inferred from the claim text.