Back surface illuminated infrared detector
AssigneeWestinghouse Electric Corp.
InventorsRichard C. McKee, Leslie L. Thompson, Dayton D. Eden, William E. Case, Thomas R. Schimert
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AssigneeWestinghouse Electric Corp.
InventorsRichard C. McKee, Leslie L. Thompson, Dayton D. Eden, William E. Case, Thomas R. Schimert
Estimating the term…
An infrared detector, having improved infrared absorptance and operating performance at or near ambient as well as the cryogenic temperature ranges. The infrared detector, in one embodiment includes a multi-filament HgCdTe detector region mounted upon a CdTe substrate, a metallic reflective region placed in front of, or behind, the HgCdTe detection region forming a resonant layer between the reflective region and HgCdTe. Electrical contacts operable to detect the change in resistance of the HgCdTe detector filaments are connected to the detector region. Embodiment for a back surface illuminated detector device is described for use in the 8 micron to 12 micron, longwave infrared (LWIR) range. Improved operation in the LWIR range at higher temperatures results in detector arrays having decreased cooling needs and infrared detector systems produced with a significant decrease in overall system weight.
A back surface illuminated infrared detector, comprising:
Dependencies are inferred from the claim text.