Method of fabricating patterned-mirror VCSELs using selective growth

A method of fabricating VCSELs comprising the steps of:

• providing a substrate having a surface;
• forming a first mirror stack of a first conductivity type on the surface of the substrate;
• forming an active region on the first mirror stack;
• forming a first portion of a second mirror stack of a second conductivity type on the active region;
• patterning a dielectric layer on the first portion of the second mirror stack to define an operating region wherein a surface of the first portion of the second mirror stack is exposed;
• forming a remaining portion of the second mirror stack of the second conductivity type on the exposed surface of the first portion of the second mirror stack in the operating region;
• providing a first electrical contact on the substrate;
• and
• providing a second electrical contact on the remaining portion of the second mirror stack.

A method of fabricating patterned-mirrors for VCSELs comprising the steps of:

• epitaxially growing a first mirror stack of a first conductivity type;
• epitaxially growing an active region on the first mirror stack;
• epitaxially growing a first portion of a second mirror stack of a second conductivity type on the active region;
• forming a dielectric layer on the first portion of the second mirror stack patterned to define an operating region wherein a surface of the first portion of the second mirror stack is exposed;
• and
• epitaxially growing a remaining portion of the second mirror stack of the second conductivity type on the exposed surface of the first portion of the second mirror stack in the operating region to form a complete second mirror stack, portions of the second mirror stack overlying the dielectric layer being polycrystalline in formation and substantially limiting the remaining portion of the second mirror stack to the operating region.

A method of fabricating VCSELs comprising the steps of:

• providing a substrate having a surface;
• epitaxially growing a first mirror stack of a first conductivity type on the surface of the substrate;
• epitaxially growing an active region on the first mirror stack;
• epitaxially growing a first portion of a second mirror stack of a second conductivity type on the active region;
• forming a dielectric layer on the first portion of the second mirror stack patterned to define an operating region wherein a surface of the first portion of the second mirror stack is exposed;
• epitaxially growing a remaining portion of the second mirror stack on the exposed surface of the first portion to form a complete second mirror stack, portions of the second mirror stack overlying the dielectric layer being polycrystalline in formation and substantially limiting the remaining portion of the second mirror stack to the operating region;
• providing a first electrical contact on the substrate;
• and
• providing a second electrical contact on the remaining portion of the second mirror stack.