Method for forming a storage cell capacitor compatible with high dielectric constant materials

A method for fabricating a capacitor for an integrated circuit, comprising the following steps:

• a) forming a contact plug overlying and in electrical contact with a substrate;
• b) interposing a diffusion barrier layer between said contact plug and a conductive oxidation resistant layer, said contact plug, said diffusion barrier layer, and said conductive oxidation resistant layer forming a first electrode of said capacitor, said diffusion barrier layer inhibiting diffusion between said contact plug and said conductive oxidation resistant layer;
• and
• c) encompassing sidewalls of said diffusion barrier layer with an electrically insulative layer, said insulative layer prohibited from overlying and underlying said diffusion barrier layer, wherein said conductive oxidation resistant layer overlies a portion of said insulative layer.

A method for fabricating a capacitor, comprising the following steps:

• a) depositing an electrically insulative layer overlying a substrate;
• b) forming an opening in said insulative layer in order to expose said substrate;
• c) forming a conductive plug in said opening, said conductive plug forming a first portion of a first electrode of said capacitor;
• d) providing a recess in said opening between a surface of said insulative layer and a surface of said conductive plug;
• e) forming a diffusion barrier layer in said recess such that said diffusion barrier layer is surrounded on sidewalls by said insulative layer, said diffusion barrier layer overlying said conductive plug and forming a second portion of said first electrode;
• f) forming a conductive oxidation resistant layer overlying said diffusion barrier layer and overlying a portion of said insulative layer to form a third portion of said first electrode, said diffusion barrier layer inhibiting diffusion between said conductive plug and said conductive oxidation resistant layer;
• g) forming a dielectric layer overlying said oxidation resistant layer;
• and
• h) forming a second electrode overlying said dielectric layer, said dielectric layer electrically insulating said first and said second electrodes from one another.

A method for fabricating a capacitor for an integrated circuit, comprising the following steps:

• a) depositing an electrically insulative layer overlying a substrate;
• b) masking the insulative layer to define a future opening in the insulative layer;
• c) etching the insulative layer in an unmasked region to form the opening and to expose the substrate in the unmasked region;
• d) forming silicon in the opening;
• e) creating a recess in the opening, the recess recessed from a surface of the insulative layer;
• f) depositing a diffusion barrier layer overlying the insulative layer and the silicon;
• g) removing portions of the diffusion barrier layer overlying the insulative layer;
• h) forming a conductive oxidation resistant layer to overly the diffusion barrier layer and the insulative layer;
• i) masking the conductive oxidation resistant layer to create a masked portion of the conductive oxidation resistant layer, the masked portion overlying the diffusion barrier layer and the insulative layer;
• and
• j) removing exposed portions of the noble metal layer while retaining the masked portion of the noble metal layer, the noble metal layer, the diffusion barrier layer and the silicon forming an electrode of the capacitor.