Back to results
US 5,478,653 AGranted
Bismuth titanate as a template layer for growth of crystallographically oriented silicon
OwnerCharles S. Guenzerinventor
Life of this patent
Estimating the term…
Abstract
A method of forming a crystallographically oriented silicon layer over a glassy layer of, for example, SiO.sub.2. A templating layer of a layered perovskite, preferably Bi.sub.4 Ti.sub.3 O.sub.12, is deposited on the glassy layer under conditions favoring its crystallographic growth with its long c-axis perpendicular to the film. The silicon is then grown over the templating layer under conditions usually favoring monocrystalline growth. Thereby, it grows crystallographically aligned with the underlaying templating layer.
Claims10
A silicon heterostructure, comprising:
- a substrate having a glassy surface comprising a non-crystalline material;
- a templating layer comprising a layered perovskite deposited on said glassy surface to be crystallographically oriented with a long axis thereof substantially perpendicular to a principal plane of the layer;
- and
- a layer of silicon epitaxially deposited on said templating layer and substantially crystallographically aligned with said templating layer.
1 more element
Dependencies are inferred from the claim text.