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AssigneeMotorola, Inc.
InventorsPaul M. Winebarger, Mark A. Zaleski, Troy B. Morrison, Jeffrey J. Sultemeier
Estimating the term…
A selective cleaning process for fabricating a semiconductor device includes the steps of processing a semiconductor substrate (10) and introducing metal contaminants (22) by contacting the semiconductor substrate (10) with a polishing slurry during a polished planarization process. The metal contaminants (22) are removed by applying a cleaning solution including an organic solvent and a compound containing fluorine. The chemical constituents of the cleaning solution are substantially unreactive with metal interconnect material (12) underlying dielectric layers (18) present on the semiconductor substrate (10). The preferred cleaning solution comprises an aqueous solution of ethylene glycol and ammonium fluoride.
A process for fabricating a semiconductor device comprising the steps of:
A process for fabricating a semiconductor device comprising the steps of:
A process for fabricating a semiconductor device comprising the steps of:
A process for fabricating a semiconductor device comprising the steps of:
Dependencies are inferred from the claim text.