US 5,477,496 AGranted

Semiconductor memory device having circuits for precharging and equalizing

AssigneeOki Electric Industry Co., Ltd.

InventorsYasuhiro Tanaka, Tetsuya Tanabe

Life of this patent

Estimating the term…

Loading patent…

Abstract

A semiconductor memory device includes first and second MOS transistors connecting a pair of data lines with a specific potential supplying node. A power transmitting circuit couples the specific potential supplying node with a power supply circuit of an equalizing potential after said first and second switching elements are made conductive. The power transmitting circuit isolates the specific potential supplying node from the power supply circuit when the equalization begins. As an alternative to the power transmitting circuit, a supplying circuit may be connected to supply a precharge potential to the specific potential supplying node when the equalization begins, and supply an equalizing potential to the specific potential supplying node when the switching elements are both turned on.

Claims12

Dependent claims

A semiconductor memory device comprising:

a pair of data lines for transferring complementary signals;
an equalizing circuit having a first switching element connected between one of said pair of data lines and a specific potential supplying node, and a second switching element connected between the other of said pair of data lines and the specific potential supplying node, said first and second switching elements being made conductive in accordance with a first control signal to electrically connect said pair of data lines with each other;
a power transmitting circuit connecting said specific potential supplying node with a power supply circuit of an equalizing potential after said first and second switching elements are made conductive;
said power transmitting circuit isolating said specific potential supplying node from said power supply circuit when one of said first and second switching elements becomes conductive and the other of said first and second switching elements is not yet conductive.

1 more element

A semiconductor memory device comprising:

a pair of data lines for transferring complementary signals;
an equalizing circuit having a first switching element connected between one of said pair of data lines and a specific potential supplying node, and a second switching element connected between the other of said pair of data lines and the specific potential supplying node, said first and second switching elements being made conductive in accordance with a control signal to electrically connect said pair of data lines with each other;
and
a supplying circuit connected to said specific potential supplying node, supplying a precharge potential to said specific potential supplying node until said first and second switching elements are turned on, and supplying an equalizing potential to said specific potential supplying node after said first and second switching elements are turned on.

1 more element

Dependencies are inferred from the claim text.