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US 5,477,073 AGranted
Thin film semiconductor device including a driver and a matrix circuit
AssigneeCasio Computer Co., Ltd.
InventorsHaruo Wakai, Shinichi Shimomaki, Tatuya Miyakawa
Life of this patent
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Abstract
A thin film transistor including a thin semiconductor film which has a central portion as a channel region, with the side portions of the semiconductor film except for the channel region being a source and a drain regions which includes n-type impurities such as phosphorus ions of high concentration (3.times.10.sup.15 atoms/cm.sup.2), and a low concentration region provided between the channel region and each of the source and drain regions including p-type impurities such as boron ions of a low concentration (1.times.10.sup.13 atoms/cm.sup.2) whereby the low concentration region serves to reduce the off current.
Claims15
A thin film semiconductor device comprising:
- a substrate;
- and
- a thin film transistor formed on said substrate, said transistor comprising:
- a thin non-single crystalline semiconductor film including a channel region, a source region provided at one end of said channel region and highly diffused with impurities of one conductivity type therein, a drain region provided at the other end of said channel region and highly diffused with impurities of the one conductivity type therein, and two low concentration regions, one of which is provided between said channel region and said source region and the other of which is provided between said channel region and said drain region, and each being low diffused with impurities of the other conductivity type therein said channel region being free of diffused impurities of any conductivity type.;
- a gate insulation film formed on said channel region of said thin semiconductor film;
- a gate electrode formed on said gate insulation film;
- a source electrode connected to said source region;
- and
- a drain electrode connected to said drain region.
6 more elements
A thin film semiconductor device comprising:
- a substrate;
- a first non-single crystalline thin transistor formed on a predetermined region of said substrate;
- and
- a second thin film transistor formed on another region of said substrate,
- said first transistor comprising:
- a thin semiconductor film having a channel region, a source region provided at one end of the channel region and highly diffused with impurities of one conductivity type therein, a drain region provided at the other end of said channel region and highly diffused with impurities of the one conductivity type therein, and two low concentration regions, one of which is provided between said channel region and said source region and the other of which is provided between said channel region and said drain region, each of said low concentration regions being low diffused with impurities of the other conductivity type therein, said channel region being free of diffused impurities of any conductivity type;
- a gate insulation film formed on said channel region of said thin semiconductor film;
- a gate electrode formed on said gate insulation film;
- a source electrode connected to said source region;
- and
- a drain electrode connected to said drain region, and
- said second transistor comprising:
- a thin semiconductor film which comprises a channel region, a source region coupled directly to one end of the channel region and including a high concentration impurity portion, and a drain region coupled directly to the other end of the channel region and including a high concentration impurity portion;
- a gate insulation film formed on said channel region of said thin semiconductor film;
- a gate electrode formed on said gate insulation film;
- a source electrode connected to said source region;
- and
- a drain electrode connected to said drain region.
15 more elements
A thin film semiconductor device comprising:
- a substrate;
- a plurality of first thin film transistors arranged in the form of a matrix on said substrate;
- and
- a driver formed on said substrate and including a plurality of second thin film transistors,
- each of said first transistors comprising:
- a non-single crystalline thin semiconductor film having a channel region, a source region provided at one end of the channel region and highly diffused with impurities of one conductivity type therein, a drain region provided at the other end of said channel region and highly diffused with impurities of the one conductivity type therein, and two low concentration regions, one of which is provided between said channel region and said source region and the other of which is provided between said channel region and said drain region, each low concentration region including a low concentration impurity of the other conductivity type and diffused therein, said channel region being free of diffused impurities of any conductive type;
- a gate insulation film formed on said channel region of said thin semiconductor film;
- a gate electrode formed on said gate insulation film;
- a source electrode connected to said source region;
- and
- a drain electrode connected to said drain region.
8 more elements
Dependencies are inferred from the claim text.