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US 5,477,066 AGranted
Heterojunction bipolar transistor
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorMasahiko Nakanishi
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Abstract
A heterojunction bipolar transistor includes a III-V compound semiconductor substrate having a surface; III-V compound semiconductor layers successively disposed on the surface including an InGaAs layer, an InP layer, and an InAlAs layer; and base electrodes in contact with the InGaAs layer wherein contact of the base electrodes with the InGaAs layer is coplanar with contact between the InP layer and the InGaAs layer.
Claims2
A heterojunction bipolar transistor comprising:
- a III-V compound semiconductor substrate having a surface;
- III-V compound semiconductor layers successively disposed on said surface including an InGaAs layer, an InP layer, and an InAlAs layer;
- and
- base electrodes in contact with said InP layer wherein contact of said base electrodes with said InP layer is coplanar with contact between said InAlAs layer and said InP layer.
1 more element
A heterojunction bipolar transistor comprising:
- a III-V compound semiconductor substrate having a surface;
- III-V compound semiconductor layers successively disposed on said surface including a GaAs layer, an InP layer, and an AlGaAs layer;
- and
- a base electrode in contact with said InP layer wherein contact of said base electrode with said InP layer is coplanar with contact between said AlGaAs layer and said InP layer.
1 more element
Dependencies are inferred from the claim text.