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US 5,477,063 AGranted
Semiconductor light emitting device with Group II-IV and III-V semiconductors
AssigneeRohm Co., Ltd.
InventorYukio Shakuda
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Abstract
In a semiconductor light emitting device of a group II-V semiconductor, a current blocking layer for passing the current only through a central stripe area is formed in one of the two light clad layers sandwiching an active layer, so that the light emission efficiency improves and a light guiding path is provided. In a process for forming each layer on a substrate through epitaxial growth, the central stripe area is formed by etching the current blocking layer.
Claims5
A semiconductor light emitting device comprising:
- a GaAs substrate of a first conductivity type;
- a first clad layer comprising a group II-VI semiconductor of the first conductivity type;
- an active layer comprising a group II-VI semiconductor, said active layer formed on the first clad layer;
- a second clad layer comprising a group II-VI semiconductor of a second conductivity type opposite to the first conductivity type, said second clad layer formed on the active layer;
- a current blocking layer comprising a group III-V semiconductor of the first conductivity type, said current blocking layer formed on the second clad layer so that a central stripe area of the second clad layer is not covered by said current blocking layer;
- and
- a third clad layer comprising a group II-VI semiconductor of the second conductivity type, said third clad layer formed on the current blocking layer and the central stripe area of the second clad layer.
4 more elements
Dependencies are inferred from the claim text.