Josephson device having an overlayer structure with improved thermal stability
AssigneeFujitsu Limited
InventorShinichi Morohashi
Life of this patent
Estimating the term…
Abstract
A Josephson device comprises a first electrode layer of a superconducting material and containing Nb therein as a constituent element, an overlayer of a nitride of a refractory metal element provided on the first electrode layer, a barrier layer of an insulating compound that contains the metal element as a constituent element and acting as a barrier of a Josephson junction, the barrier layer being provided on the overlayer, and a second electrode layer of a superconducting material and containing Nb therein as a constituent element, the second electrode layer being provided on the barrier layer.
Claims14
A Josephson device, comprising:
- a first electrode layer of a superconducting material containing Nb as a constituent element, said first electrode layer having upper and lower major surfaces;
- an overlayer of a nitride of a metal element, said overlayer having upper and lower major surfaces and being provided on the first electrode layer;
- a barrier layer of an insulating material containing said metal element as a constituent element and acting as a barrier layer of a Josephson junction, said barrier layer having upper and lower major surfaces and being provided on said upper major surface of said overlayer;
- a second electrode layer of a superconducting material containing Nb therein as a constituent element, said second electrode layer having upper and lower major surfaces and being provided on said upper major surface of said barrier layer;
- each of said first and second electrode layers having a coherent length and said overlayer having a thickness, measured between the upper and lower major surfaces thereof, which is less than said coherent length;
- and
- said nitride of said metal element, of said overlayer, consisting essentially of ZrN, and said insulting material of said barrier layer consisting essentially of Zro.sub.x.
A Josephson device, comprising:
- a first electrode layer of a superconducting material containing Nb as a constituent element, said first electrode layer having upper and lower major surfaces;
- an overlayer of a nitride of a metal element, said overlayer having upper and lower major surfaces and being provided on the first electrode layer;
- a barrier layer of an insulting material containing said metal element as a constituent element and acting as a barrier layer of a Josephson junction, said barrier layer having upper and lower major surfaces and being provided on said upper major surface of said overlayer;
- a second electrode layer of a superconducting material containing Nb therein as a constituent element, said second electrode layer having upper and lower major surfaces and being provided on said upper major surface of said barrier layer;
- each of said first and second electrode layers having a coherent length and said overlayer having a thickness, measured between the upper and lower major surfaces thereof, which is less than said coherent length;
- and
- said nitride of said metal element, of said overlayer, consisting essentially of TaN, and said insulating material of said barrier layer consisting essentially of TaO.sub.x.
A Josephson device as claimed in claim, in which said overlayer has a thickness of less than 10 nm.
A Josephson device, comprising:
- a first electrode layer of a superconducting material containing Nb as a constituent element, said first electrode layer having upper and lower surfaces;
- an overlayer of a nitride of a metal element, said overlayer having upper and lower major surfaces and being provided on the first electrode layer;
- a barrier layer of an insulting material containing said metal element as a constituent element and acting as a barrier layer of a Josephson junction, said barrier layer having upper and lower major surfaces and being provided on said upper major surface of said overlayer;
- a second electrode layer of a superconducting material containing Nb therein as a constituent element, said second electrode layer having upper and lower major surfaces and being provided on said upper major surface of said barrier layer;
- each of said first and second electrode layers having a coherent length and said overlayer having a thickness, measured between the upper and lower major surfaces thereof, which is less than said coherent length;
- and
- said nitride of said metal element, of said overlayer, consisting essentially of TaN and said insulating material of said barrier layer consisting essentially of Ta.sub.2 N.
Dependencies are inferred from the claim text.