Method of manufacturing semiconductor gas rate sensor

A method of manufacturing a semiconductor gas rate sensor including a base composed of a first semiconductor substrate and a second semiconductor substrate bonded thereto and having a gas flow passage defined therein and a nozzle defined therein for injecting a gas flow into the gas flow passage, and a detector disposed in and extending across the gas flow passage for detecting a deflected state of the gas flow when an angular velocity acts on the base, said method comprising the steps of:

• fabricating said detector on either a mating surface of said first semiconductor substrate or a mating surface of said second semiconductor substrate;
• defining a first recess in either the mating surface of said first semiconductor substrate or the mating surface of said second semiconductor substrate;
• defining a second recess in the mating surface of said first semiconductor substrate, said second recess serving as said nozzle when combined with the mating surface of said second semiconductor substrate;
• depositing a thermosetting adhesive layer on the mating surface of said second semiconductor substrate;
• joining said first semiconductor substrate to said second semiconductor substrate with the thermosetting adhesive layer deposited on the mating surface of said second semiconductor substrate;
• and
• heating said first semiconductor substrate and said second semiconductor substrate that have been joined to each other while said second semiconductor substrate is being kept underneath said first semiconductor substrate, thereby setting said thermosetting adhesive layer.