US 5,476,816 A · Process for etching an insulating layer after a metal etching step

Abstract

A metal etch processing sequence eliminates the need to use an organic masking layer solvent and etches a portion of an insulating layer after a plasma metal etching step. The etch of the insulating layer is performed with an etching solution that may include 1,2-ethanediol, hydrogen fluoride, and ammonium fluoride. The etching solution etches in a range of 100-900 angstroms of the insulating layer. The etch removes at least 75 percent of the mobile ions within the insulating layer, and should remove at least 95 percent of the mobile ions. The process may be implemented using an acid hood, an acid compatible spray tool, or a puddle processing tool. The process includes many different embodiments that allow the process to be easily integrated into many different existing processing sequences. A similar process may be used with a resist-etch-back processing sequence.

Claims21

Dependent claims

A process for forming a semiconductor device comprising the steps of:

forming a first insulating layer over a semiconductor substrate;
depositing a metal-containing layer over the first insulating layer;
forming a patterned organic masking layer over the metal-containing layer thereby forming exposed portions of the metal-containing layer;
etching the exposed portions of the metal-containing layer with a halide-containing plasma etchant to form an interconnect member;
removing the patterned organic masking layer with a plasma gas;
etching a portion of the first insulating layer with a fluoride-containing solution, wherein this step:
etches at least 100 angstroms of the first insulating layer;
and
is performed after the step of etching the exposed portions and prior to forming any layer over the interconnect member;
and
forming a second insulating layer over the interconnect member.

8 more elements

Dependencies are inferred from the claim text.

Process for etching an insulating layer after a metal etching step

Life of this patent

Process for etching an insulating layer after a metal etching step

Life of this patent

Abstract

Claims21