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US 5,476,815 AGranted
Manufacturing method of semiconductor device
AssigneeCanon Kabushiki Kaisha
InventorYasushi Kawasumi
Life of this patent
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Abstract
A method of manufacturing a semiconductor device having a bonding pad portion. A wiring is formed on a substrate and an insulative protective film is formed onto the wiring. An opening portion is exposed and serves as the bonding pad portion in which a surface of a part of the wiring is exposed. A metal film is selectively grown only in this opening position.
Claims3
A method of manufacturing an electronic device having a bonding pad portion, comprising the steps of:
- preparing a substrate having a conductor:
- forming an insulative film onto said conductor and forming an opening portion in which a surface of a part of said conductor is exposed, said opening portion serving as said bonding pad portion;
- and
- selectively vapor phase depositing a metal film on the part of said conductor exposed in said opening portion, so that said metal film on said bonding pad portion is thicker than a thickness of said insulative film, wherein said depositing is conducted with vapor phase depositing using alkylaluminum hydride.
1 more element
Dependencies are inferred from the claim text.