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US 5,476,812 AGranted
Semiconductor heterojunction structure
AssigneeSumitomo Electric Industries, Ltd.
InventorsTsunenobu Kimoto, Tadashi Tomikawa, Nobuhiko Fujita
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Abstract
A semiconductor heterojunction structure comprising a p-type diamond layer and an n-type cubic boron nitride layer on a surface of said p-type diamond layer. Such heterojunction structure is useful for a semiconductor device such as a diode, a transistor, a laser and a rectifier, particularly an element which emits light from blue light to ultraviolet light.
Claims1
A method for preparing a light emitting element having a heterojunction structure comprising the steps of:
- forming a p-type diamond layer by a microwave plasma CVD method on a n-type cubic boron nitride substrate prepared by a high-pressure synthesis;
- forming an AuSi electrode on a back surface of the n-type cubic boron nitride substrate;
- and
- forming a Ti electrode on the p-type diamond layer.
1 more element
Dependencies are inferred from the claim text.