Method for forming an insulated gate field effect transistor
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Yasuhiko Takemura
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Abstract
A method for forming an insulated gate field effect transistor capable of providing shorter channel lengths, said process comprising: forming on an insulator film having provided on a semiconductor, a portion for establishing a gate therewith in the later steps; introducing impurities into the semiconductor using said portion as the mask, to thereby establish a first impurity region in a self-aligned manner; establishing a gate by removing at least the sides of said portion by etching or by oxidizing a surface of said portion or by removing the oxidized surface; and introducing impurities into the semiconductor using said gate as the mask, to thereby establish a second impurity region in a self-aligned manner.
Claims14
A method for forming an insulated gate field effect transistor having a gate electrode, comprising the steps of:
- forming a conductive material on an insulating film provided on a semiconductor;
- forming a first impurity region in said semiconductor by introducing an impurity into said semiconductor with said conductive material as a mask with an upper surface of said conductive material directly exposed to said impurity;
- removing a portion of said conductive material after forming the first impurity region in order to form a remaining portion thereof as said gate electrode;
- and
- forming a second impurity region in said semiconductor subsequent to said removing step by introducing an impurity into said semiconductor with said formed gate electrode as a mask with an upper surface of said gate electrode directly exposed to said impurity.
A method for forming an insulated gate field effect transistor comprising the steps of:
- forming a pattern including a gate electrode therein on an insulating film provided on a semiconductor;
- forming a first impurity region in said semiconductor by introducing an impurity into said semiconductor with said pattern as a mask;
- oxidizing a portion of said pattern after forming said first impurity region;
- removing the oxidized portion in order to form a remaining portion thereof as said gate electrode;
- and
- forming a second impurity region in said semiconductor after removing said oxidized portion by introducing an impurity into said semiconductor with said gate electrode as a mask.
A method for forming an insulated gate field effect transistor comprising the steps of:
- forming a pattern including a gate electrode therein and comprising a polycrystal silicon on an insulating film provided on a single crystal silicon;
- forming a first impurity region in said single crystal silicon by introducing an impurity into said single crystal silicon with said pattern as a mask;
- oxidizing a portion of said pattern by thermal oxidation after forming said first impurity region;
- removing the oxidized portion in order to form a remaining portion thereof as said gate electrode;
- and
- forming a second impurity region in said single crystal silicon after removing said oxidized portion by introducing an impurity into said single crystal silicon with said gate electrode as a mask.
A method for forming an insulated gate field effect transistor comprising the steps of:
- forming a conductive material on an insulating film provided on a semiconductor;
- forming a first impurity region in said semiconductor by introducing an impurity into said semiconductor with said conductive material as a mask with an upper surface of said conductive material directly exposed to said impurity;
- removing a portion of said conductive material by etching in order to form a remaining portion thereof as a gate electrode;
- and
- forming a second impurity region in said semiconductor by introducing an impurity into said semiconductor with said gate electrode as a mask with an upper surface of said gate electrode directly exposed to said impurity.
Dependencies are inferred from the claim text.