Projection exposure method and system used therefor

A projection exposure method comprising the steps of:

• producing a beam of light whose central part in cross section is darkened, said beam of light being able to vary in wavelength;
• illuminating said darkened beam of light to a mask having a pattern through an optical illumination system;
• and
• projecting said darkened beam of light to a photoresist film formed on a substrate through said mask and an optical projection system to carry out an exposure, said darkened beam of light varying continuously in wavelength during said exposure;
• wherein a surface of said photoresist film is not in accordance with a focal plane of said optical projection system in said exposure, and said pattern of said mask is transferred on said photoresist film through said exposure.

A projection exposure method comprising the steps of:

• producing a beam of light whose central part in cross section is darkened;
• illuminating said darkened beam of light to a mask having a pattern through an optical illumination system;
• projecting said darkened beam of light to a photoresist film formed on a substrate through said mask and an optical projection system to carry out a first exposure, an optical path of said darkened beam of light between said mask and said photoresist film having a first length;
• and
• projecting said darkened beam of light to said photoresist film through said mask and said optical projection system to carry out a second exposure, said optical path of said darkened beam of light having a second length which is different from said first length;
• wherein a surface of said photoresist film is not in accordance with a focal plane of said optical projection system in said first and second exposures, respectively, and said pattern of said mask is transferred on said photoresist film through said first and second exposures.

A projection exposure method comprising the steps of:

• producing a beam of light whose central part in cross section is darkened;
• illuminating said beam of light to a mask having a pattern through an optical illumination system;
• projecting said darkened beam of light to a photoresist film formed on a substrate through said mask and an optical projection system to carry out a first exposure, said optical projection system having a plurality of different focal points and said darkened beam of light being projected using a first one of said plurality of focal points;
• and
• projecting said darkened beam of light to said photoresist film through said mask and said optical projection system to carry out a second exposure, said darkened beam of light being projected using a second one of said plurality of focal points;
• wherein a surface of said photoresist film is not in accordance with a focal plane of said optical projection system in said first and second exposures, respectively, and said pattern of said mask is transferred on said photoresist film through said first and second exposures.