Method for forming deposited film by separately introducing an active species and a silicon compound into a film-forming chamber

A method for forming a deposition film, comprising:

• decomposing a first compound containing germanium and halogen in an activation chamber by applying an energy to form an active species, wherein the lifetime of such active species is 0.1 seconds or longer;
• separately introducing, into a film-forming chamber for forming a deposition film on a substrate, a second compound containing silicon and hydrogen and said active species, said active species being capable of chemical interaction with said second compound containing silicon and hydrogen;
• and
• applying to a mixture of said second compound and said active species at least one excitation energy selected from the group consisting of optical, thermal and electrical discharge energies to excite said second compound in said mixture thereby facilitating the formation of a deposition film on said substrate.