Light emission from rare-earth element-doped CaF.sub.2 thin films
AssigneeTexas Instruments Incorporated
InventorChih-chen Cho
Life of this patent
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Abstract
By growing semi-insulating CaF.sub.2 films (296) on a silicon substrate (240), forming superlattice structures (260) made of CaF.sub.2 :Nd and other semiconductor layers (294) and by associating a co-dopant with Nd in the CaF.sub.2 films photoluminescence efficiency of CaF.sub.2 films is increased. This permits using electrons to produce photons and controlling optoelectronic devices using CaF.sub.2 films through voltage variation.
Claims16
A method for fabricating an apparatus for inducing light emission from electroluminescent stimulation, comprising:
- providing a silicon substrate;
- sputtering a CaF.sub.2 thin film over said silicon substrate;
- doping said CaF.sub.2 thin film with a rare-earth dopant;
- and
- providing a source of luminescence in proximity to said CaF.sub.2 thin film.
A method for fabricating an apparatus for inducing light emission from electroluminescent stimulation comprising:
- providing a silicon substrate;
- forming a superlattice over said substrate, said superlattice comprising alternately arranged CaF.sub.2 thin films and semiconductor thin films;
- and
- doping said CaF.sub.2 thin films with a rare-earth dopant.
A method for fabricating an apparatus for inducing light emission from electroluminescent stimulation comprising:
- providing a substrate;
- forming a layer of CaF.sub.2 over said substrate;
- doping said layer of CaF.sub.2 with two rare-earth elements, whereby electroluminescence from one of said dopants produces photoluminescence from the other of said dopants.
Dependencies are inferred from the claim text.