Method of measuring electric charge of semiconductor wafer
AssigneeDainippon Screen Mfg. Co., Ltd.
InventorsSadao Hirae, Motohiro Kouno, Hideaki Matsubara
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Abstract
Amounts of electric charges in a semiconductor wafer are measured by using a non-destructive measuring device. First and second flat-band voltages before and after a specific charging process are measured with a non-destructive C-V measurement device. A gap between a test electrode and a surface of a semiconductor wafer is also measured before and after performing the charging process. The electric charge accumulated proximate the surface of the semiconductor wafer is determined according to measured values of the gap and the flat-band voltages before and after performing the charging process.
Claims10
A method of measuring an electric charge in an insulating film formed on a surface of a substrate of a semiconductor wafer, said method comprising steps of:
- (a) measuring a C-V characteristic of said semiconductor wafer to determine a first flat-band voltage;
- (b) treating said semiconductor wafer by a specific process;
- (c) measuring a C-V characteristic of said semiconductor wafer after performing said specific process, to determine a second flat-band voltage;
- and
- (d) determining said electric charge in said insulating film of said semiconductor wafer accumulated through said specific process as a function of said first and second flat-band voltages.
A method of measuring an electric charge in an insulating film formed on a surface of a substrate of a semiconductor wafer, said method comprising steps of:
- (a) providing a non-destructive measuring device comprising a test electrode and holding means for holding said test electrode apart from said semiconductor wafer;
- (b) measuring a C-V characteristic of said semiconductor wafer with said non-destructive measuring device to determine a first flat-band voltage Vfb;
- (c) treating said semiconductor wafer by a specific process;
- (d) measuring a C-V characteristic of said semiconductor wafer after performing said specific process with said non-destructive measuring device, to determine a second flat-band voltage V'fb;
- and
- (e) determining said electric charge in said insulating film of said semiconductor wafer accumulated through said specific process as a function of said first and second flat-band voltages.
A method of measuring an electric charge in a first insulating layer formed on a surface of a substrate of a semiconductor wafer, said method comprising the steps of:
- (a) providing a measuring device comprising a test electrode having a second insulating layer under said test electrode;
- (b) placing said test electrode onto said semiconductor wafer so that said second insulating layer is in contact with said first insulating layer, and measuring a C-V characteristic of said semiconductor wafer with said measuring device to determine a first flat-band voltage Vfb;
- (c) treating said semiconductor wafer by a specific process;
- (d) placing said test electrode onto said semiconductor wafer so that said second insulating layer is in contact with said first insulating layer, and measuring a C-V characteristic of said semiconductor wafer after performing said specific process with said measuring device, to determine a second flat-band voltage V'fb;
- and
- (e) determining said electric charge in said first insulating layer of said semiconductor wafer accumulated through said specific process as a function of said first and second flat-band voltages.
A method of measuring electric charge in an first insulating layer formed on a surface of a substrate of a semiconductor wafer, said method comprising the steps of:
- (a) providing a measuring device comprising a test electrode having a second insulating layer under said test electrode;
- (b) placing said test electrode onto said semiconductor wafer so that said second insulating layer is in contact with said first insulating layer, and measuring a C-V characteristic of said semiconductor wafer with said measuring device to determine a first flat-band voltage Vfb;
- (c) treating said semiconductor wafer by a specific process;
- (d) positioning said test electrode relative to said semiconductor wafer so that said second insulating layer is in contact with said first insulating layer, and measuring a C-V characteristic of said semiconductor wafer after performing said specific process with said measuring device, to determine a second flat-band voltage V'fb;
- and
- (e) determining said electric charge in said first insulating layer of said semiconductor wafer accumulated through said specific process as a function of said first and second flat-band voltages.
Dependencies are inferred from the claim text.