Internally shielded dynamic random access memory cell

Abstract

In the manufacturing process of a Dynamic Random Access Memory cell, the conducting layer used for preventing the capacitive coupling between a bit line and a word line is formed over the surface of the entire memory cell excepting the contact region of a bit line and a storage electrode. Moreover, as the conducting layer used for preventing the capacitive coupling is used as an etching barrier in the etching process forming a contact hole, self-aligned contacts are formed. Therefore, the operation of the unwanted cell of a Dynamic Random Access Memory cell caused by the capacitive coupling is protected and a highly integrated Dynamic Random Access Memory cell is manufactured.

Dependencies are inferred from the claim text.