Repair line structure for thin film electronic devices

A thin film electronic imager device having a pixel array structure fabricated on a substrate, said pixel army structure comprising:

• a first electrically conductive line disposed along a first axis of said imager device;
• a dielectric layer disposed on said substrate and over said first electrically conductive line;
• a second electrically conductive line disposed along a second axis of said imager device, said second axis being oriented substantially perpendicular to said first axis, said second conductive line being disposed in said imager device in vertical alignment with said first conductive line at a respective crossover region with said dielectric layer disposed therebetween;
• a semiconductive island disposed in said crossover region between said dielectric layer and said second conductive line, the lateral limits of said semiconductive island extending beyond the boundaries of said crossover region;
• said second conductive line substantially conforming to the topography of underlying components disposed on said substrate such that said second conductive line comprises a plurality of steps disposed in correspondence with locations where said second conductive line extends over said topography;
• and
• a first protective layer and a second protective layer disposed over respective selected steps in said second conductive line, said first and second protective layers being separated by a repair area disposed therebetween at a portion of said second conductive line disposed in vertical alignment with said first conductive line.