Method of manufacturing semiconductor laser diode using self alignment
AssigneeSamsung Electronics Co., Ltd.
InventorSeung-kee Yang
Life of this patent
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Abstract
A manufacturing method of a semiconductor laser diode is disclosed in which a current cutoff layer is formed on the wall of a first metal layer by a low-temperature process such as plasma-enhanced chemical vapor deposition and the gas composition ratio of the reactive ion etching process is appropriately controlled so that the maximum area can be secured for a self-aligned first metal exposing area, i.e., an ohmic contact area. This minimizes the generation of heat during lasing and enhances reliability. Further, the present invention stabilizes the process by self alignment.
Claims9
A method for manufacturing a semiconductor laser diode comprising the steps of:
- (a) sequentially growing and stacking a buffering layer, a first cladding layer, a first waveguide layer, an activating layer, a second waveguide layer, a second cladding layer, and a cap layer on a top side of a semiconductor substrate;
- (b) forming a channel mask on two edges of said cap layer;
- (c) forming a first metal layer of a size in ohmic contact with said cap layer between said channel mask formed in said step (b);
- (d) selectively etching the resultant structure of said step (c) to a depth using said channel mask and said first metal layer as a mask, to thereby form a ridge on which said first metal layer is located;
- (e) forming a current cutoff layer over the ridge portion and the etched portion formed in said step (d);
- (f) coating photoresist on said current cutoff layer formed in said step (e) and selectively removing said photoresist and current cutoff layer so as to expose said first metal layer;
- (g) removing said photoresist remaining in said step (f);
- and
- (h) depositing a second metal layer on said top side of said semiconductor.
Dependencies are inferred from the claim text.