US 5,474,950 AGranted

Method for manufacturing a capacitor in a semiconductor device

AssigneeHyundai Electronics Industries Co., Ltd.

InventorJae K. Kim

Life of this patent

Estimating the term…

Loading patent…

Abstract

The present invention provides a method for manufacturing a capacitor in a semiconductor device which increases a capacitance of the memory cell and improves a step coverage of a conducting material. The present invention provides a method for manufacturing a capacitor in a semiconductor device, comprising steps of: forming a first conducting layer 2, an oxide layer 3 and an A--B alloy 4a on an insulation layer 1 sequentially; settling a superfluous B material 4c dissolved in a A material 4b on the oxide layer 3 by a heat treatment so that the B material is separated from the A material; only etching the A material 4b by an echant and etching an exposed oxide layer 3 by using a settled B material 4c as an etch barrier; and etching an exposed first conducting layer 2 up to an intended depth by using the separated B material 4c and a residual oxide layer 3 as an etch barrier.

Claims5

Dependent claims

A method for manufacturing a capacitor in a semiconductor device comprising the steps of:

forming a first conducting layer, an oxide layer, and an alloy including a A material and a B material, on an insulation layer sequentially;
settling a superfluous B material dissolved in said alloy on the oxide layer by a heat treatment so that said superfluous B material is separated from said A material;
etching said A material by an echant and etching an exposed oxide layer by using said settled superfluous B material as an etch barrier to form a settled superfluous B material and a residual oxide layer;
etching an exposed first conducting layer to a surface of the insulation layer by using said settled superfluous B material and said residual oxide layer as an etch barrier;
eliminating said superfluous B material and said residual oxide layer;
and
forming a second silicon layer on surface of remaining first conducting layer and exposed insulation layer;
wherein said alloy is a Al--Si alloy.

5 more elements

Dependencies are inferred from the claim text.