Method of making semiconductor device having polysilicon resistance element

A method of fabricating a polysilicon film resistor element comprising the steps of:

• forming a first insulating film on a semiconductor substrate, said first insulating film having a plurality of field isolation portions, each of said field isolation portions being partially embedded into said semiconductor substrate in order to divide a surface portion of said semiconductor substrate into first, second and third active regions, said second active region intervening between said first and third active regions;
• forming first and second element regions into said first and second active regions, respectively;
• selectively forming a resistive polysilicon film on said first insulating film, said resistive polysilicon film being doped with an impurity to provide a polysilicon film resistor element having a first end portion which is electrically connected to said first element region, a second end portion of said resistive polysilicon film being located over and isolated from said third active region by said first insulating film, an intermediate portion of said resistive polysilicon film which is between said first and second end portions being located over said second element region in said second active region, said intermediate portion being isolated from said second active region by said first insulating film, said second end portion of said resistive polysilicon film having a surface part;
• forming a second insulating film to cover said resistive polysilicon film;
• forming a contact hole to expose said surface part of said second end portion of said resistive polysilicon film;
• and
• forming a metal with a high melting point on said surface part of said second end portion of said resistive polysilicon film exposed by said contact hole.