Method of forming a liquid crystal display device

A method of forming a liquid crystal display device having a matrix of picture elements arranged on a substrate comprising:

• selectively depositing a first layer of semiconductor material in a matrix of columns and rows;
• forming a gate insulating film over the first layer of semiconductor material;
• forming a conductive layer over the substrate, the conductive layer including a plurality of gate lines having gate electrodes arranged in a matrix and capacitor electrodes, arranged in a matrix, the gate electrodes positioned to oppose portions of the first semiconductor layer for creating a plurality of channel regions therein, the capacitor electrodes to be used as an electrode for a picture element capacitor for a picture element;
• forming source drain and channel regions in the first semiconductor layer, the channel regions opposing the gate electrodes, to form a matrix of thin film transistors on the substrate;
• selectively depositing insulating material over the substrate in the form of a first insulation layer and a second insulation layer;
• forming contact holes through the insulating material to provide access to the source and drain regions of each transistor;
• forming a plurality of source lines and liquid crystal driving electrodes over the substrate, the source lines crossing the gate lines at crossover regions, with both layers of insulating material therebetween, the driving electrodes coupled to a source or drain region of a transistor and opposing the capacitor electrode with one, but not both of the insulation layers therebetween.

A method of forming a liquid crystal display device, comprising:

• providing a substrate;
• disposing a first layer of semiconductor material over the substrate, the first semiconductor layer formed to include a matrix of transistor regions, each having a source region, a drain region and a channel therebetween;
• disposing a gate insulating film at a location opposite at least the channel region of the transistor regions;
• disposing a plurality of capacitor electrodes, for forming picture elements, over the substrate, each of the capacitor electrodes located at a transistor region;
• disposing a plurality of gate lines and gate electrodes coupled to the gate lines over the substrate, the gate electrodes positioned at a location to oppose the channel of the transistor regions with the gate insulating film therebetween;
• disposing a plurality of source lines over the substrate, the source lines coupled to the source regions and crossing the gate lines at cross-over locations;
• disposing a plurality of picture element electrodes and a first insulating layer and a second insulating layer over the substrate, each picture element electrode coupled to one of the source or drain regions, the picture element electrodes positioned to oppose the capacitor electrodes, the first insulating layer located between the picture element electrode and the capacitor electrode and between the crossing source and gate lines, the second insulating layer also located between the crossing source and gate lines, the picture element electrode, first insulating layer and capacitor electrode forming a picture element capacitor and the source lines, gate lines with both the first and second insulating layers therebetween forming a cross-over capacitor;
• positioning a second substrate opposite the first substrate and disposing liquid crystal material therebetween.

A method of forming a liquid crystal display device having an array of display picture elements arranged in a matrix, comprising:

• providing a substrate;
• selectively depositing a first semiconductor layer on the substrate in a matrix of columns and rows for forming a matrix of source, channel and drain regions;
• forming a gate insulating layer on the first semiconductor layer;
• forming a conductive layer including a pattern of substantially parallel gate lines having gate electrodes and capacitor electrodes, the gate electrodes positioned to oppose portions of the first semiconductor layer to be used as a channel of a transistor for each picture element in the matrix and the capacitor electrode to be used for a picture element capacitor for each picture element;
• diffusing impurities into the first semiconductor layer except in the region covered by the gate electrode to form a source, a channel and a drain region in the first semiconductor layer for each transistor in the matrix array;
• depositing a first insulating layer over the surface of the substrate, including over the capacitor electrode and over the gate lines;
• depositing a second insulating layer over the surface of the substrate and selectively removing portions of the second insulating layer except in the region where the gate lines will be crossed by a source line;
• forming contact holes through the first insulating layer to provide access to the source and drain regions of each transistor in the array;
• forming a plurality of source lines and liquid crystal driving electrodes over the substrate, the source lines being substantially parallel and orthogonal to the gate lines and crossing the gate lines at the region of the two insulating layers so that the first and second insulating layers are between the crossing source lines and the gate lines, the liquid crystal driving electrodes coupled to one of the source and drain regions of each transistor in the array and overlapping the capacitor electrode with the first insulating layer between the capacitor electrode and the driving electrode.