Method of making thin film heterojunction solar cell
AssigneeSiemens Solar Industries International, Inc.
InventorsGary A. Pollock, Kim W. Mitchell
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Abstract
A thin film photovoltaic device comprises a metal back contact having a first p-type semiconductor film of CVD CIS thereon; a second, transparent, n-type semiconductor film of CVD zinc oxide on the CIS and a thin interfacial film of transparent, insulating zinc oxide between the p-type CIS film and the n-type metal oxide. The interfacial zinc oxide film is formed by depositing zinc hydroxide on the CIS from a solution of one of zinc sulfate, zinc chloride, and zinc acetate and complexing agents comprising ammonium hydroxide and TEA and annealing the deposit to convert the zinc hydroxide to form the zinc oxide.
Claims13
A process for making a thin film heterojunction photovoltaic device comprising the steps of:
- depositing a first film of p-type copper indium diselenide film on a metal back contact;
- chemically depositing from solution a thin film of zinc hydroxide on said first film;
- converting said zinc hydroxide to a transparent, insulating zinc oxide thin film;
- and
- depositing a second film of n-type transparent zinc oxide on said transparent, insulating zinc oxide thin film.
Dependencies are inferred from the claim text.