Method and apparatus for dry etching
AssigneeHitachi, Ltd.
InventorsTakao Kumihashi, Kazunori Tsujimoto, Shinichi Tachi
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Abstract
A method and apparatus for dry etching changes at least one of the effective pumping speed of a vacuum chamber and the gas flow rate to alter the processing of an etching pattern side wall of a sample between first and second conditions. The first and second conditions include the presence or absence of a deposit film, or the presence, absence or shape of a taper angle. Various parameters for controlling the first and second conditions are contemplated.
Claims14
A dry etching method comprising the steps of:
- changing an effective exhaust rate in an etching chamber during a dry etching process from a first effective exhaust rate to a second effective exhaust rate;
- wherein the first effective exhaust rate is either larger or smaller than the second effective exhaust rate.
A dry etching apparatus comprising:
- an etching chamber;
- a gas introducing means to introduce at least one kind of gas into the etching chamber;
- a gas exhausting means to exhaust gas from the etching chamber;
- a pressure measuring means to measure a pressure in the etching chamber;
- and
- a plasma generating means to generate a plasma in the etching chamber;
- wherein an effective exhaust rate of the gas exhausting means is at least 600 liters/second, and the pressure in the etching chamber can be set in a 4-25 mTorr range by the pressure measuring means.
A dry etching method comprising the steps of:
- introducing a material to be processed into an etching chamber;
- introducing at least one kind of gas into the etching chamber;
- setting a pressure in the etching chamber to 4-25 mTorr by controlling a gas exhausting means for the etching chamber;
- forming the gas introduced in the etching chamber into a plasma to process the material in the etching chamber;
- and
- setting an effective exhaust rate of the gas exhausting means to at least 600 liters/second.
A dry etching method comprising the steps of:
- in a main etching step in which planar portions of a material to be processed are etched, performing etching at an effective exhaust rate of 800-100,000 liters/second;
- and
- in an overetching step, performing etching at an effective exhaust rate of 1-700 liters/second.
A dry etching method comprising the steps of:
- in a main etching step in which planar portions of a material to be processed are etched, performing etching at an effective exhaust rate of 800-100,000 liters/second;
- and
- in an overetching step, performing etching at an effective exhaust rate of 1-500 liters/second.
Dependencies are inferred from the claim text.