Solar cell having chalcopyrite semiconductor film
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsTakayuki Negami, Mikihiko Nishitani, Shigemi Kohiki, Takahiro Wada
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Abstract
A solar cell device includes an absorber layer or heterojunction-forming layer which comprises a I-III-VI.sub.2 chalcopyrite semiconductor film containing a Group VIIA element as a dopant. The semiconductor film can be made by depositing a I-III-VI.sub.2 chalcopyrite compound film onto a substrate while evaporating onto the substrate a Group VIIA element to obtain a I-III-VI.sub.2 chalcopyrite compound film containing a Group VIIA element therein as a dopant.
Claims1
A solar cell device having as an absorber layer or heterojunction forming layer a chalcopyrite semiconductor film comprising a Group I-III-VI.sub.2 chalcopyrite compound and a Group VIIA element as a dopant therein, wherein the Group VI element of the chalcopyrite compound is partly substituted by the Group VIIA element dopant and the dopant is present in an amount of about 0.1 atomic percent or less.
Dependencies are inferred from the claim text.