Thin film high temperature silicide thermocouples
AssigneeThe United States of America as represented by the Secretary of Commerce
InventorKenneth G. Kreider
Life of this patent
Estimating the term…
Loading patent…
AssigneeThe United States of America as represented by the Secretary of Commerce
InventorKenneth G. Kreider
Estimating the term…
A high temperature resistant and corrosion resistant thermoelement for a thermocouple formed of a silicon base layer, a conductive thin film of a silicide of a transition metal such as titanium or molybdenum which is stable at temperatures in the range from 800.degree. C. to at least 1000.degree. C., preferably to at least about 1500.degree. C., and an oxygen diffusion limiting silica overlayer, and a method of forming such a thermoelement by depositing a conductive transition metal silicide film over a silicon base layer and heat treating the film in an oxidizing gas atmosphere having a partial pressure of oxidizing gas sufficient to oxidize silicon atoms from the transition metal silicide to form a continuous SiO.sub.2 overlayer, but insufficient to oxidize transition metal atoms from the transition metal silicide, in which silicon atoms from the transition metal silicide layer which are oxidized to form the SiO.sub.2 overlayer are replaced by silicon atoms from the silicon base layer.
A method of preparing a metal silicide thermoelement for a thermocouple, said method comprising the steps of:
A high temperature and corrosion resistant thermocouple comprising a first conductive thermoelement extending between a measurement junction and a reference junction and a dissimilar second conductive thermoelement extending between said measurement junction and said reference junction, said first and second thermoelements having different electrical resistivities and being in electrical communication with each other only at said measurement junction and at said reference junction, wherein at least one of said first and second thermoelements comprises a conductive transition metal silicide film disposed on a silicon base layer and covered by an oxygen diffusion limiting SiO.sub.2 overlayer, said at least one thermoelement being stable at temperatures up to at least about 1,000.degree. C.
A high temperature and corrosion resistant thermocouple comprising a first conductive thermoelement extending between a measurement junction and a reference junction and a dissimilar second conductive thermoelement extending between said measurement junction and said reference junction, said first and second thermoelements having different electrical resistivities and being in electrical communication with each other only at said measurement junction and at said reference junction, wherein at least one of said first and second thermoelements comprises a conductive transition metal silicide film produced by
Dependencies are inferred from the claim text.