Seam pressure sensor employing dielectically isolated resonant beams and related method of manufacture
AssigneeKulite Semi Conductor Products, Inc.
InventorsAnthony D. Kurtz, Alexander A. Ned
Life of this patent
Estimating the term…
Abstract
A pressure transducer comprising at least one diaphragm formed in a wafer of semiconducting material, the at least one diaphragm being spaced from a first surface of the wafer, a first layer of semiconducting material disposed over the at least one diaphragm, the first layer forming at least one resonating beam over the at least one diaphragm, and a plurality of resistor elements formed from a third layer of semiconducting material disposed over the at least one resonating beam, and isolation means for dielectrically isolating the at least one resonating beam from the at least one diaphragm.
Claims9
In a pressure transducer of the type comprising at least one diaphragm formed in a wafer of semiconducting material, said at least one diaphragm being spaced from a first surface of said wafer, a first layer of semiconducting material disposed over said at least one diaphragm, said first layer forming at least one resonating beam over said at least one diaphragm, and a plurality of resistor elements formed from a third layer of semiconducting material disposed over said at least one resonating beam, the improvement therewith, comprising:
- isolation means for dielectrically isolating both said at least one diaphragm and said plurality of resistors from said at least one resonating beam.
Dependencies are inferred from the claim text.