Image sensing device

Abstract

An image sensing device is provided with an image sensor having one or more radiation-sensitive elements which convert incident radiation into collected charges. A read-out circuit converts the collected charges into pixel signals which contain a hold level and an image level, the hold level providing a comparison voltage and the image level being representative of a charge quantity. The hold level is formed by coupling the read-out circuit temporarily to a comparison voltage; this coupling is done by closing a transistor which adds thermal noise to the pixel signal. The image sensing device comprises a signal processing circuit which comprises a clamp circuit which makes hold-levels of different pixel signals substantially equal. The image level of each pixel signal is offset by the same amount as its hold level. An electronic image signal is formed as a result of integration of the image level in respect of the clamped hold level. The noise component of the resulting electronic image signal is substantially reduced because the noise of the hold level is decreased and the high-frequency noise component of the image level is substantially averaged-out. Since only the image level is integrated a rapid processing of the pixel signal into an electronic image signal is accomplished and hence the image sensing device according to the invention is able to process consecutive images at a high rate.

Dependencies are inferred from the claim text.