Method for growing transparent conductive gallium-indium-oxide films by sputtering
AssigneeAT&T Corp.
InventorsRobert J. Cava, Jueinai R. Kwo, Gordon A. Thomas
Life of this patent
Estimating the term…
Abstract
Applicants have discovered that films of conductively doped GaInO.sub.3 grown on substrates by sputter deposition have conductivity comparable to conventional wide band-gap transparent conductors while exhibiting superior light transmission, particularly in the green and blue wavelength regions of the visible spectrum. Substrate temperatures ranged from 100.degree. C. to 550.degree. C. in an argon-oxygen ambient of total pressure 4 mTorr to 20 mTorr with an optimal oxygen partial pressure in the range 0.5 to 2 mTorr.
Claims9
A method for coating a substrate with a transparent, conductive layer comprising GaInO.sub.3 comprising the steps of:
- disposing a target comprising GaInO.sub.3 and a substrate to be coated in a low pressure ambient having a partial pressure of oxygen in the range 0.1 mTorr to 10 mTorr;
- heating the substrate to a temperature in the range 100.degree. C. to 550.degree. C.;
- and
- bombarding said target with ions for sputtering material from said target onto said substrate.
In a liquid crystal display device of the type comprising a pair of electrodes, a liquid crystal medium disposed between said pair of electrodes and means for applying a voltage between said electrodes, the improvement wherein:
- at least one of said electrodes comprises a transparent, conductive layer comprising GaInO.sub.3.
Dependencies are inferred from the claim text.