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AssigneeABB Management AG
InventorsChristian Hauswirth, Gerhard Hochstuhl, Bruno Hofstetter, Markus Keller
Estimating the term…
A method and a circuit arrangement having a device for measuring the depletion layer temperature of a GTO are specified. In this case, a measurement current (I.sub.M) is impressed in the gate circuit, and the voltage (U.sub.GR) between the cathode and gate is measured, with an applied measurement current (I.sub.M), after the transient turn-off processes have decayed. This voltage (U.sub.GR) is at this time dependent on the depletion layer temperature of the GTO. It thus becomes possible to measure the depletion layer temperature directly on the element, that is to say without circuitous routes via a heat sink temperature and calculation of the thermal resistance or the like, and during operation, continuously, and in consequence to monitor and control the stress level on the GTO precisely.
A method for measuring the depletion layer temperature of a GTO thyristor having a cathode and a gate and which is used as a semiconductor switch in an installation comprising a load circuit having a load current and a gate circuit having a control current, whereby the load current is switched on and off by means of the GTO thyristor by applying the control current to the gate circuit, comprising the steps of:
A circuit arrangement comprising:
Dependencies are inferred from the claim text.