Method of making an integrated circuit structure by using a non-conductive plug

A method for forming an interlevel contact in an integrated circuit device, comprising the steps of:

• etching an opening through an insulating layer to expose a conductive structure beneath;
• depositing a conductive first barrier layer over the insulating layer and in the opening, wherein the first barrier layer covers sidewalls of the opening and the conductive structure;
• depositing a non-conductive conformal layer of material over the first barrier layer;
• etching back the conformal layer to form a non-conductive plug filling a lower portion of the opening, wherein the non-conductive layer is removed from the first barrier layer over the insulating layer;
• depositing a refractory metal layer over the first barrier layer and the plug;
• and
• depositing an aluminum layer over the refractory metal layer at a temperature and a deposition rate which allows the aluminum to migrate into the opening and completely fill the opening, wherein the aluminum layer is substantially planar over the opening.