Back to results
US 5,472,910 AGranted
Process for making OHMIC contacts and photovoltaic cell with ohmic contact
AssigneeBP Solar Limited
InventorsDaniel R. Johnson, Sener Oktik, Mehmet E. Ozsan, Michael H. Patterson
Life of this patent
Estimating the term…
Abstract
Ohmic contacts to p-type IIB/VIB semiconductor are obtained by a process which includes the step of depositing a viscous liquid containing a Group IB metal salt on a surface of a semiconductor, substantially free of oxide groups, heating to form a dried layer, removing the dried layer, washing the surface to remove residual by-products and drying the surface.
Claims23
The process of making an article having an ohmic contact to p-type IIB/VIB semi-conductor layer is characterised by the successive steps of:
- depositing a viscous liquid containing a Group IB metal salt on a surface, substantially free of oxide groups, of the layer of the p-type semi-conductor, heating the resulting deposit to form a dried layer, removing the dried layer, washing the surface to remove residual by-products, and drying the surface, resulting in an ohmic contact to the p-type IIB/VIB semi-conductor.
A thin film photovoltaic device comprising.
- (a) a transparent conducting layer
- (b) a CdS layer
- (c) a p-type IIB/VIB semi-conductor layer
- (d) an ohmic contact to the IIB/VIB semi-conductor layer,
- wherein the ohmic contact is obtained by the successive steps of:
- depositing a viscous liquid containing a Group 1B metal salt on a surface, substantially free of oxide groups of the layer of the p-type semi-conductor;
- heating the resulting deposit to form a dried layer;
- removing the dried layer;
- washing the surface to remove residual by-products, and drying the surface.
6 more elements
Dependencies are inferred from the claim text.