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US 5,472,564 AGranted
Method of dry etching with hydrogen bromide or bromide
AssigneeFujitsu Limited
InventorsMoritaka Nakamura, Takashi Kurimoto, Katsuhiko Iizuka
Life of this patent
Estimating the term…
Abstract
Plasma etching with hydrogen bromide or bromine as an etching gas allows a precise control in attaining vertical etching or taper etching with a desired taper angle by controlling the temperature of a mass to be etched, which mass is usually a semiconductor wafer.
Claims5
A process for selectively etching a mass, comprising:
- providing an etching mask over the mass to expose an area of the mass to be etched;
- and
- providing a plasma of an etching gas in contact with said mass in an etching chamber, whereby said exposed area of said mass is selectively etched, wherein said etching gas has a purity of 99.99% or more and contains as the main reactive component reacting with said mass hydrogen bromide, and wherein said etching chamber has no carbon-bearing material in contact with said plasma of the etching gas.
Dependencies are inferred from the claim text.