IC wiring connecting method and apparatus

An IC wiring device connecting apparatus for interconnecting conductive lines of a same wiring plane of an IC chip for correcting the wiring, for interconnecting conductive lines of different wiring planes of a multilayer IC chip at a same position for correcting the wiring, or for connecting a conductive line of a lower wiring plane of a multilayer IC chip to a conductive line formed at a separate position on the multilayer IC chip, which comprises:

• a vacuum chamber for subjecting an IC chip to a laser induced chemical vapor deposition processing and to an ion beam material processing;
• an XY table disposed within the reaction chamber for supporting a stage holding the IC chip thereon, and capable of locating the IC chip at a desired position for laser beam induced chemical vapor deposition processing and for ion beam material processing;
• a laser system comprising a laser and an optical system for focusing a laser beam on the IC chip held on the stage;
• an illuminating unit for illuminating the IC chip held on the stage for observation;
• an observing unit for observing and inspecting the IC chip held on the stage and illuminated by the illuminating unit, comprising an optical system for observation;
• a bomb containing a substance for forming a conductive film, and connected through a valve to the reaction chamber;
• a bomb containing an inert gas, and connected through a valve to the reaction chamber;
• a vacuum pump for evacuating the reaction chamber, connected through a valve to the reaction chamber;
• a nozzle connected through the valve to the bomb containing the substance for forming the conductive film, and disposed with the opening thereof adjacent to a position where a position of the IC chip to be subjected to laser beam processing is located, to blow the substance for forming the conductive film against the position of the IC chip to be subjected to laser beam processing;
• an ion beam generating system for projecting a focused ion beam on the IC chip mounted on the stage for ion beam material processing, joined to the vacuum chamber, and comprising a bright ion source, an inducing electrode for inducing an ion beam from the bright ion source, electrostatic lenses for concentrating and focusing the ion beam on the IC chip mounted on the stage, a blanking electrode, and a deflecting electrode, and wherein said ion beam generating system is contained in a lens barrel;
• a secondary particle detector provided within the reaction chamber, and capable of detecting secondary particles radiated from the IC chip when the IC chip is irradiated by a concentrated ion beam and providing secondary particle signals corresponding to the secondary particles;
• a scanning unit for scanning the wiring of the IC chip by amplifying the secondary particle signals and displaying an image of the wiring of the IC chip represented by the secondary particle signals on a monitor;
• and
• a vacuum pump for evacuating the lens barrel.

An IC wiring connecting apparatus for interconnecting conductive lines of a same wiring plane of an IC chip for correcting the wiring, for interconnecting conductive lines of different wiring planes of a multilayer IC chip at a same position, or for connecting a conductive line of a lower wiring plane of a multilayer IC chip to a conductive line formed at a separate position on the multilayer IC chip, which comprises:

• a reaction chamber for subjecting an IC chip to a laser induced chemical vapor deposition process for forming at least one conductive film for interconnecting desired conductive lines of the IC chip, and for subjecting the IC chip to a process for forming at least one insulating film over said at least one conductive film for interconnecting desired conductive lines of the IC chip;
• a first XY table disposed within the reaction chamber for supporting a stage holding the IC chip thereon, and capable of locating the IC chip at a desired position for laser induced chemical vapor deposition processing;
• a first laser system comprising a laser and an optical system for focusing a laser beam on the IC chip held on the stage, for forming the at least one conductive film for interconnecting conductive lines of the IC chip;
• a second laser system comprising a laser and an optical system for focusing a laser beam on the IC chip held on the stage, for forming the at least one insulating film over the at least one conductive film;
• an illuminating unit for illuminating the IC chip held on the stage for observation, comprising a light source, a condenser lens, and a half mirror;
• an observing unit for observing and inspecting the IC chip held on the stage and illuminated by the illuminating unit, comprising an optical system for observation;
• a bomb containing a substance for forming the at least one conductive film, and connected through a valve to the reaction chamber;
• a bomb containing an inert gas, and connected through a valve to the reaction chamber;
• bombs containing Si.sub.2 H.sub.6 gas and N.sub.2 0 gas for forming at least one SiO.sub.2 film, respectively, connected through valves, respectively, to the reaction chamber;
• a vacuum pump for evacuating the reaction chamber, connected through a valve to the reaction chamber;
• a vacuum chamber for ion beam material processing, joined to the reaction chamber;
• a gate valve hermetically separating the reaction chamber and the vacuum chamber;
• a second XY table for supporting the stage holding the IC chip thereon, and capable of locating the IC chip at a desired position for ion beam material processing;
• a vacuum pump for evacuating the vacuum chamber, connected through a valve to the vacuum chamber;
• an ion beam generating system for projecting a concentrated ion beam on the IC chip mounted on the stage for ion beam material processing, joined to the vacuum chamber, and comprising a bright ion source, an inducing electrode for inducing an ion beam from the bright ion source, electrostatic lenses for concentrating and focusing the ion beam on the IC chip mounted on the stage, a blanking electrode, and a deflecting electrode, and a lens barrel containing the ion beam generating system;
• a secondary particle detector provided within the vacuum chamber for detecting secondary particle signals transmitted from the IC chip when the IC chip is irradiated by an ion beam;
• and
• a scanning unit for scanning the wiring of the IC chip by amplifying the secondary particle signals and displaying an image of the wiring of the IC chip represented by the secondary particle signals on a monitor.

An IC wiring connecting apparatus for interconnecting conductive lines of a same wiring plane of an IC chip for correcting the wiring, for interconnecting conductive lines of different wiring planes of a multilayer IC chip at a same position, or for connecting a conductive line of a lower wiring plane of a multilayer IC chip to a conductive line formed at a separate position on the multilayer IC chip, which comprises:

• a reaction chamber for subjecting an IC chip to ion beam material processing to form at least one hole in the IC chip, to form at least one conductive film for interconnecting conductive lines of the IC chip, and to form at least one insulating film over the at least one conductive film, and for observing and inspecting the IC chip;
• a first XY table disposed within the reaction chamber for supporting a stage holding the IC chip thereon, and capable of locating the IC chip at a desired position for ion beam processing and for inspection and observation;
• an ion beam generating system for projecting a concentrated ion beam on the IC chip mounted on the stage for ion beam processing and for inspection and observation, joined to the reaction chamber, and comprising a bright ion source, an inducing electrode for inducing an ion beam from the bright ion source, electrostatic lenses for concentrating and focusing the ion beam on the IC chip mounted on the stage, a blanking electrode, and a deflecting electrode, and wherein a lens barrel contains the ion beam generating system;
• a bomb containing a material gas for forming the at least one insulating film, and connected through a valve to the reaction chamber;
• a vacuum pump for evacuating the reaction chamber, connected through a valve connected to the reaction chamber;
• a preparatory vacuum chamber joined to the reaction chamber, and having a gate to be opened for putting the IC chip in and taking out the IC chip from the preparatory vacuum chamber;
• a gate valve hermetically separating the reaction chamber and the preparatory vacuum chamber;
• a movable table for receiving the IC chip on the stage mounted thereon, disposed within the preparatory vacuum chamber, and capable of moving near to and away from the gate valve separating the reaction chamber and the preparatory vacuum chamber, for transferring the stage to the XY table and for receiving the stage from the XY table;
• a secondary particle detector disposed in the reaction chamber, and capable of detecting secondary electrons radiated from the IC chip when the IC chip is irradiated by a concentrated ion beam and providing secondary particle signals corresponding to the secondary particles;
• and
• a scanning unit for scanning the wiring of the IC chip by amplifying the secondary particle signals and displaying an image of the wiring of the IC chip on a monitor.

An IC wiring connecting apparatus for interconnecting conductive lines of a same wiring plane of an IC chip for correcting the wiring, for interconnecting conductive lines of different wiring planes of a multilayer IC chip at a same position for correcting the wiring, or for connecting a conductive line of a lower wiring plane of a multilayer IC chip to a conductive line formed at a separate position on the multilayer IC chip, which comprises:

• a reaction chamber for subjecting an IC chip to ion beam processing;
• an XY table for supporting a stage holding the IC chip thereon disposed within the reaction chamber, and capable of locating the IC chip at a desired position for ion beam processing;
• an ion beam generating system for projecting a concentrated ion beam on the IC chip mounted on the stage for ion beam processing, joined to the reaction chamber, and comprising a bright ion source, an inducing electrode for inducing an ion beam from the bright ion source, electrostatic lenses for concentrating and focusing the ion beam on the IC chip mounted on the stage, a blanking electrode, and a deflecting electrode, and wherein a lens barrel contains the ion beam generating system;
• a vacuum pump for evacuating the reaction chamber, connected through a valve to the reaction chamber;
• a vacuum pump for evacuating the lens barrel, connected through a valve to the lens barrel;
• a preparatory vacuum chamber joined to the reaction chamber, and having a gate to be opened for putting the IC chip in and taking out the IC chip from the preparatory vacuum chamber;
• a gate valve hermetically separating the reaction chamber and the preparatory vacuum chamber;
• a movable table for receiving the IC chip on the stage mounted thereon, disposed within the preparatory vacuum chamber, and capable of moving near to and away from the gate valve separating the reaction chamber and the preparatory vacuum chamber, for transferring the stage to the XY table and for receiving the stage from the XY table;
• a vacuum pump for evacuating the preparatory vacuum chamber, connected through a valve to the preparatory vacuum chamber;
• a secondary particle detector disposed in the reaction chamber, and capable of detecting secondary particles radiated from the IC chip when the IC chip is irradiated by an ion beam and providing secondary particle signals;
• a scanning unit for scanning the IC chip by amplifying the secondary particle signals and displaying an image of the wiring of the IC chip on a monitor;
• and
• at least one nozzle disposed inside said reaction chamber to supply at least one gas for the ion beam processing.

An IC wiring connecting apparatus for interconnecting lines of a same wiring plane of an IC chip for correcting the wiring, for interconnecting conductive lines of different wiring planes of a multilayer IC chip at a same position for correcting the wiring, or for connecting a conductive line of a lower wiring plane of a multilayer IC chip to a conductive line formed at a separate position on the multilayer IC chip, which comprises:

• an ion beam material processing unit including a vacuum chamber for subjecting the IC chip to ion beam material processing;
• a first XY table disposed within the vacuum chamber for supporting a stage mounted with the IC chip, and capable of locating the IC chip at a desired position for ion beam material processing;
• an ion beam generating system for projecting a concentrated ion beam on the IC chip mounted on the stage for ion beam material processing, joined to the vacuum chamber, and comprising a bright ion source, an inducing electrode for inducing an ion beam from the bright ion source, electrostatic lenses for concentrating and focusing the ion beam on the IC chip mounted on the stage, a blanking electrode, and a deflecting electrode, and wherein a lens barrel contains the ion beam generating system;
• an evacuating mechanism for evacuating the lens barrel;
• a vacuum pump for evacuating the vacuum chamber, connected through a valve to the vacuum chamber;
• a sputtering mechanism provided within the vacuum chamber;
• a preparatory vacuum chamber joined to the vacuum chamber;
• a gate valve hermetically separating the vacuum chamber and the preparatory vacuum chamber;
• a secondary particle detector provided within the vacuum chamber for detecting particles radiated from the IC chip when the IC chip is irradiated by a concentrated ion beam and providing secondary particle signals corresponding to the secondary particles;
• and a scanning unit for scanning the wiring of the IC chip by amplifying the secondary particle signals and displaying an image of the wiring of the IC chip on a monitor;
• and
• a laser CVD unit including a reaction chamber for subjecting the IC chip to a laser induced chemical vapor deposition process for forming at least one conductive film for interconnecting desired conductive lines of the IC chip;
• a second XY table disposed within the reaction chamber for supporting a stage holding the IC chip thereon, and capable of locating the IC chip at a desired position for laser induced chemical vapor deposition processing;
• a laser system comprising a laser and an optical system for focusing a laser beam on the IC chip held on the stage;
• an illuminating unit for illuminating the IC chip held on the stage for observation, comprising a light source, a condenser lens, and a half mirror;
• an observing unit for observing and inspecting the IC chip held on the stage and illuminated by the illuminating unit, comprising an optical system for observation;
• a bomb containing a substance for forming the at least one conductive film, and connected through a valve to the reaction chamber;
• a bomb containing an inert gas, and connected through a valve to the reaction chamber;
• a vacuum pump for evacuating the reaction chamber, connected through a valve to the reaction chamber;
• a preparatory vacuum chamber joined to the reaction chamber;
• a gate valve hermetically separating the reaction chamber and the preparatory vacuum chamber;
• a movable table disposed within the preparatory vacuum chamber for supporting the stage;
• a sputter etching electrode disposed within the preparatory vacuum chamber and grounded;
• means for electrically insulating the movable table;
• a high frequency power source connected to the movable table to supply power to the movable table to generate a plasma of an inert gas;
• and a conduit for supplying the inert gas into the preparatory vacuum chamber, having one end connected to the preparatory vacuum chamber and the other end connected through a valve to the bomb containing the inert gas. PG,55

An IC wiring connecting apparatus for connecting conductive lines to each other on an IC device having the conductive lines located under an insulating film, comprising:

• structure for forming holes through the insulating film formed over the conductive lines, at separated positions of the insulating film, to expose each of the conductive lines to be interconnected, said structure including a device for irradiating a first focused energy beam at the separated positions of the insulating film;
• and
• structure for depositing metal in each of said holes to form respective metal wiring portions and for depositing metal wiring on the surface of the insulating film, extending from a metal wiring portion in a hole at one of the separated positions of the insulating film to a metal wiring portion in a hole at another of the separated positions of the insulating film, said structure for depositing metal including structure for decomposing a gaseous metal compound by irradiating a second focused energy beam at an interior of each of the holes and on the surface of the insulating film extending between the separated positions in an atmosphere of the gaseous metal compound so as to provide said metal wiring on the surface of the insulating film extending between the separated positions, whereby the conductive lines are connected electrically by said metal wiring portions and said metal wiring.

An IC wiring connecting apparatus for connecting conductive lines to each other on an IC device, comprising:

• a reaction chamber provided inside a vacuum vessel;
• a table for placing the IC device thereon, disposed in said reaction chamber;
• an ion source having a high brightness, and disposed inside said vacuum vessel so as to oppose said reaction chamber;
• structure for extracting an ion beam from said ion source;
• structure for introducing gas to at least the surface of the IC device in the reaction chamber;
• structure for controlling the output of said ion beam, so as to form a spot, and for controlling the spot diameter and the radiating direction of the spot, so as to deposit metal wiring on at least the surface of an insulating film extending between separated positions on the surface of the IC device, by decomposing gaseous metal compound by radiating said ion beam in an atmosphere of the gaseous metal compound introduced by said gas introducing structure, including a scanning ion microscope unit for visually observing said IC device during radiation of said ion beam onto the surface of the IC device.

A thin metal film processing apparatus for depositing a thin metal film on an IC device, comprising:

• a reaction chamber formed inside a vacuum vessel;
• a table for placing the IC device thereon, disposed in said reaction chamber;
• an ion source having a high brightness, disposed inside said vacuum vessel so as to oppose said reaction chamber;
• structure for extracting an ion beam from said ion source;
• structure for introducing gas to at least the surface of the IC device in the reaction chamber;
• structure for controlling the output of said ion beam, so as to form a spot, and for controlling the spot diameter and the radiating direction of the spot, so as to deposit said thin metal film on at least the surface of the IC device by decomposing gaseous metal compound by radiating said ion beam in an atmosphere of gaseous metal compound introduced by said gas introducing structure, including a scanning ion microscope unit for visually observing said IC device during radiation of said ion beam onto the surface of the IC device.

An IC wiring connecting apparatus for connecting conductive lines to each other on an IC device having the conductive lines located under an insulating film, comprising:

• a reaction chamber;
• a support structure for placing the IC device thereon, disposed inside said reaction chamber;
• an ion beam irradiating structure for forming holes through the insulating film formed over the conductive lines, at separated positions of the insulating film, to expose each of the conductive lines to be interconnected by irradiating a focused ion beam at the separated positions of the insulating film of the IC device disposed inside said reaction chamber;
• a laser beam chemical vapor deposition structure for depositing metal in each of said holes to form respective metal wiring portions and for depositing metal wiring on the surface of the insulating film, extending from a metal wiring portion in a hole at one of the separated positions of the insulating film to a metal wiring portion in a hole at another of the separated positions of the insulating film, by decomposing a gaseous metal compound by irradiating a focused laser beam at an interior of each of the holes and on the surface of the insulating film extending between the separated positions in an atmosphere of the gaseous metal compound so as to provide said metal wiring on the surface of the insulating film extending between the separated positions, whereby the conductive lines are connected electrically by said metal wiring portions and said metal wiring;
• and
• transfer structure for transferring said IC device in a state which maintains the IC device in an atmosphere of the reaction chamber without the IC device being exposed to air in transferring the IC device between said ion beam irradiating structure and said laser beam chemical vapor deposition structure.

An IC wiring device connecting apparatus for interconnecting conductive lines of a same wiring plane of an IC chip for correcting the wiring, for interconnecting conductive lines of different wiring planes of a multilayer IC chip at a same position for correcting the wiring, or for connecting a conductive line of a lower wiring plane of a multilayer IC chip to a conductive line formed at a separate position on the multilayer IC chip, which comprises:

• a vacuum chamber for subjecting an IC chip to a laser induced chemical vapor deposition processing and to an ion beam processing;
• an XY table disposed within the vacuum chamber for supporting a stage holding the IC chip thereon, and capable of locating the IC chip at a desired position for laser beam induced chemical vapor deposition processing and for ion beam processing;
• a laser system comprising a laser and an optical system for focusing a laser beam on the IC chip held on the stage;
• an illuminating unit for illuminating the IC chip held on the stage for observation;
• an observing unit for observing and inspecting the IC chip held on the stage and illuminated by the illuminating unit, comprising an optical system for observation;
• a bomb containing a substance for forming a conductive film, and connected through a valve to the vacuum chamber;
• a vacuum pump for evacuating the vacuum chamber, connected through a valve to the vacuum chamber;
• an ion beam generating system for projecting a focused ion beam on the IC chip mounted on the stage, joined to the vacuum chamber, and comprising a bright ion source, an inducing electrode for inducing an ion beam from the bright ion source, electrostatic lenses for concentrating and focusing the ion beam on the IC chip mounted on the stage, a blanking electrode, and a deflecting electrode, and wherein said ion beam generating system is contained in a lens barrel;
• a secondary particle detector provided within the vacuum chamber, and capable of detecting secondary particles radiated from the IC chip when the IC chip is irradiated by a concentrated ion beam and providing secondary particle signals corresponding to the secondary particles;
• a scanning unit for scanning the wiring of the IC chip by amplifying the secondary particle signals and displaying an image of the wiring of the IC chip represented by the secondary particle signals on a monitor;
• and
• a vacuum pump for evacuating the lens barrel.

An IC wiring connecting apparatus for interconnecting conductive lines of a same wiring plane of an IC chip for correcting the wiring, for interconnecting conductive lines of different wiring planes of a multilayer IC chip at a same position, or for connecting a conductive line of a lower wiring plane of a multilayer IC chip to a conductive line formed at a separate position on the multilayer IC chip, which comprises:

• a reaction chamber for subjecting an IC chip to ion beam processing to form at least one hole in the IC chip, to form at least one conductive film for interconnecting conductive lines of the IC chip, and to form at least one insulating film over the at least one conductive film, and for observing and inspecting the IC chip;
• a first XY table disposed within the reaction chamber for supporting a stage holding the IC chip thereon, and capable of locating the IC chip at a desired position for ion beam processing and for inspection and observation;
• an ion beam generating system for projecting a concentrated ion beam on the IC chip mounted on the stage for ion beam processing and for inspection and observation, joined to the reaction chamber, and comprising a bright ion source, an inducing electrode for inducing an ion beam from the bright ion source, electrostatic lenses for concentrating and focusing the ion beam on the IC chip mounted on the stage, a blanking electrode, and a deflecting electrode, and wherein a lens barrel contains the ion beam generating system;
• a bomb containing a material gas for forming the at least one insulating film, and connected through a valve to the reaction chamber;
• a vacuum pump for evacuating the reaction chamber, connected through a valve connected to the reaction chamber;
• a secondary particle detector disposed in the reaction chamber, and capable of detecting secondary electrons radiated from the IC chip when the IC chip is irradiated by a concentrated ion beam and providing secondary particle signals corresponding to the secondary particles;
• and
• a scanning unit for scanning the wiring of the IC chip by amplifying the secondary particle signals and displaying an image of the wiring of the IC chip on a monitor.

An IC wiring connecting apparatus for interconnecting conductive lines of a same wiring plane of an IC chip for correcting the wiring, for interconnecting conductive lines of different wiring planes of a multilayer IC chip at a same position for correcting the wiring, or for connecting a conductive line of a lower wiring plane of a multilayer IC chip to a conductive line formed at a separate position on the multilayer IC chip, which comprises:

• a vacuum chamber for subjecting an IC chip to ion beam processing;
• an XY table for supporting a stage holding the IC chip thereon disposed within the vacuum chamber, and capable of locating the IC chip at a desired position for ion beam processing;
• an ion beam generating system for projecting a concentrated ion beam on the IC chip mounted on the stage for ion beam processing, joined to the vacuum chamber, and comprising a bright ion source, an inducing electrode for inducing an ion beam from the bright ion source, electrostatic lenses for concentrating and focusing the ion beam on the IC chip mounted on the stage, a blanking electrode, and a deflecting electrode, and wherein a lens barrel contains the ion beam generating system;
• a vacuum pump for evacuating the vacuum chamber, connected through a valve to the vacuum chamber;
• a vacuum pump for evacuating the lens barrel, connected through a valve to the lens barrel;
• a secondary particle detector disposed in the vacuum chamber, and capable of detecting secondary particles radiated from the IC chip when the IC chip is irradiated by an ion beam and providing secondary particle signals;
• a scanning unit for scanning the IC chip by amplifying the secondary particle signals and displaying an image of the IC chip on a monitor;
• and
• at least one nozzle disposed inside said vacuum chamber, to supply at least a gas for the ion beam processing.