Apparatus for producing silicon single crystal
AssigneeSumitomo Sitix Corporation
InventorsKaoru Kuramochi, Makoto Ito, Kiichiro Kitaura
Life of this patent
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Abstract
A method of producing a silicon single crystal, in which a cylindrical partition is immersed in a molten pure silicon liquid or molten silicon liquid containing a Sb dopant within a crucible and the molten liquid inside the partition is pulled up from the crucible to produce the silicon single crystal, wherein an interval between a lower end of the partition and a crucible bottom is changed to control an oxygen concentration in the pulling-up silicon single crystal. The interval is reduced in the case where the oxygen concentration in the pulling-up silicon single crystal is to be increased while the interval is increased in the case where the oxygen concentration is to be reduced.
Claims15
An apparatus for producing a silicon single crystal, comprising:
- a crucible for containing molten silicon;
- a cylindrical partition within the crucible with a lower end of the partition separated from a bottom of the crucible by a set distance;
- pulling up means for pulling up a silicon single crystal from molten silicon liquid in the crucible at a position located inside the cylindrical partition;
- and
- setting means for immovably fixing the partition relative to the crucible such that the set distance between the lower end of said partition and said crucible bottom can be adjusted to control an oxygen concentration in the silicon single crystal pulled-up from the melt.
Dependencies are inferred from the claim text.