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US 5,471,946 AGranted
Method for producing a wafer with a monocrystalline silicon carbide layer
AssigneeCS Halbleiter -und Solartechnologie GmbH
InventorsChristoph Scholz, Franz Koehl, Thomas Weber
Life of this patent
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Abstract
To produce a large-surface wafer, a monocrystalline SiC layer (4) is grown epitaxially on a monocrystalline Si layer (1) provided with a nucleation layer (3) by carbonization. On the monocrystalline SiC layer (4), a polycrystalline SiC layer (5) is deposited. The Si layer is then etched away, resulting in a wafer consisting of a compound of monocrystalline and polycrystalline SiC layers (4, 5) and meeting the highest demands of semiconductor technology.
Claims5
A method of producing a wafer with a monocrystalline silicon carbide layer comprising the steps of:
- providing a monocrystalline silicon substrate;
- carbonizing a surface of the substrate to form a monocrystalline silicon carbide nucleation layer;
- forming a monocrystalline silicon carbide layer on the monocrystalline silicon carbide nucleation layer;
- forming a polycrystalline silicon carbide layer on the monocrystalline silicon carbide layer, cooling the silicon substrate, monocrystalline silicon carbide nucleation layer, monocrystalline silicon carbide layer and polycrystalline silicon carbide layer;
- and removing the silicon substrate to produce a wafer having a monocrystalline silicon carbide layer and a polycrystalline silicon carbide layer.
2 more elements
Dependencies are inferred from the claim text.