Method for selecting a self pulsating semiconductor laser
AssigneeRohm Co., Ltd.
InventorsHiroshi Mataki, Satoshi Uchida, Hajime Sakiyama
Life of this patent
Estimating the term…
Abstract
A method for selecting a semiconductor laser is provided which contributes to improved productivity of a highly reliable semiconductor laser of prolonged lifetime, and which includes the steps of: (a) measuring highest peak intensity, Ia, and next highest peak intensity, Ib, of an interference fringes pattern of laser radiation of each semiconductor laser using an interferometer to find a damping ratio of visibility of the interference fringes pattern, .gamma.=Ib/Ia; and (b) selecting a semiconductor exhibiting self-pulsation by selecting a semiconductor laser which emits laser radiation whose damping ratio of visibility, .gamma., is 0.5 or less.
Claims6
A method for selecting a semiconductor laser, comprising the steps of:
- (a) measuring highest peak intensity, Ia, and next highest peak intensity, Ib, of an interference fringes pattern of laser radiation of each semiconductor laser using an interferometer to find a damping ratio of visibility of the interference fringes pattern, .gamma.=Ib/Ia;
- and
- (b) selecting a semiconductor laser exhibiting self-pulsation by selecting a semiconductor laser which emits laser radiation whose damping ratio of visibility, .gamma., is 0.5 or less.
Dependencies are inferred from the claim text.