Thin film magnetoresistive head which includes a domain suppressing layer and method for manufacturing the same
AssigneeHitachi, Ltd.
InventorsShigeru Tadokoro, Shinji Narishige, Hiroaki Koyanagi, Tetsuo Kobayashi
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Abstract
In a magnetoresistive head, a domain suppressing layer is formed under each of opposite ends of a magnetoresistive film. The domain suppressing layer is composed of a first ferromagnetic film, an antiferromagnetic film and a second ferromagnetic film which are laminated one over another in this order. Since the spin distribution of the antiferromagnetic film is transmitted to the magnetoresistive film via the second ferromagnetic film, a stable longitudinal bias magnetic field can be achieved, irrespective of the degree of contamination of the surface of the ferromagnetic film.
Claims19
A magnetoresistive head comprising:
- (a) a substrate;
- (b) electrodes;
- (c) a magnetoresistive film;
- and
- (d) a domain suppressing layer disposed only at each of opposite end portions of said magnetoresistive film for making said magnetoresistive film a single domain, wherein said domain suppressing layer is a three-layer film including a first layer comprised of one of a first layer ferromagnetic film and a nonmagnetic crystalline film, a second layer comprised of an antiferromagnetic film and a third layer comprised of a third layer ferromagnetic film which are laminated over one another in this order, said third layer ferromagnetic film being in contact with said magnetoresistive film.
A method for manufacturing a magnetoresistive head which has a domain suppressing layer only at each of opposite ends of a magnetoresistive film for making said magnetoresistive film a single domain, comprising the steps of:
- (a) forming said domain suppressing layer wherein said domain suppressing layer forming step includes a first step of forming a first layer comprised of one of a first layer ferromagnetic film and a nonmagnetic crystalline film, a second step of forming a second layer of an antiferromagnetic film over said first layer, and a third step of forming a third layer comprised of a third layer ferromagnetic film over said second layer;
- (b) shaping said domain suppressing layer into a target pattern by etching;
- and
- (c) forming said magnetoresistive film over said target pattern of said domain suppressing layer.
Dependencies are inferred from the claim text.