Spatial light modulator element with amorphous film of germanium, carbon and silicon for light blocking layer

A method of manufacturing a spatial light modulator, comprising the steps of:

• providing a first transparent electrode film, on a substrate,
• providing a photoconductive layer on said first transparent electrode film,
• providing a light blocking layer on said photoconductive layer, wherein the light blocking layer is an amorphous film consisting essentially of 5-45 atomic % of germanium, 17.5-92.5 atomic % of carbon and 2.5-77.5 atomic % of silicon,
• providing a dielectric multilayered film on said light blocking layer,
• providing a light modulation layer on said dielectric multilayered film, and
• providing a second transparent electrode film, on said light modulation layer, said light modulation layer consisting of a liquid crystal material for changing intensity, phase or running direction of read-out light, wherein the light blocking layer and the photoconductive layer are continuously formed in the same film forming device by a plasma chemical vapor deposition method.

A method of manufacturing a spatial light modulator, comprising the steps of:

• providing a first transparent electrode film, on a substrate,
• providing a photoconductive layer on said first transparent electrode film,
• providing a light blocking layer on the photoconductive layer,
• providing a dielectric multilayered film on the light blocking layer,
• providing a light modulation layer on the dielectric multilayered film, and
• providing a second transparent electrode film, on the light modulation layer, wherein the light modulation layer consists of a liquid crystal material for changing intensity, phase or running direction of read-out light, and the light blocking layer consists of a hydrogenated amorphous silicon film having a resistivity of 10.sup.8 .OMEGA.cm to 10.sup.10 .OMEGA.cm and a light absorption coefficient of 10.sup.4 cm.sup.-1 to 10.sup.5 cm.sup.-1 at wavelength of 600 nm.

A method of manufacturing a spatial light modulator, comprising the steps of:

• providing a first transparent electrode film, on a substrate,
• providing a photoconductive layer on the first transparent electrode film,
• providing a light blocking layer on the photoconductive layer,
• providing dielectric multilayered film on the light blocking layer,
• providing a light modulation layer on the dielectric multilayered film, and
• providing a second transparent electrode film, on the light modulation layer, wherein the light modulation layer consists of a liquid crystal material for changing intensity, phase or running direction of read-out light, and the light blocking layer consists of a hydrogenated amorphous silicon film having a resistivity of 10.sup.8 .OMEGA.cm to 10.sup.10 .OMEGA.cm and a light absorption coefficient of 10.sup.4 cm.sup.-1 to 10.sup.5 cm.sup.-1 at the wavelength of 600 nm, the hydrogenated amorphous silicon film being formed at a temperature below 100.degree. C., and then annealed at a temperature above 100.degree. C. and below 120.degree. C.