Polysilicon pixel electrode

A method for fabricating a silicon pixel electrode for a liquid crystal display, comprising:

• forming a gate metal layer on a first portion of a glass substrate;
• forming a gate dielectric layer on the gate metal layer and on a second portion of the glass substrate;
• forming an amorphous silicon channel layer on a first portion of the gate dielectric layer and located proximate to the gate metal layer;
• forming a polysilicon source layer adjacent to said amorphous silicon channel layer;
• forming a polysilicon drain layer adjacent to said amorphous silicon channel layer;
• and
• forming a polysilicon pixel electrode layer on a second portion of the gate dielectric layer.

A method for fabricating a silicon pixel electrode for a liquid crystal display, comprising:

• depositing and etching a gate metal layer on a display glass substrate;
• depositing a gate dielectric layer on the gate metal layer and glass substrate;
• depositing an undoped a-Si layer for the silicon pixel electrode and a TFT, on the gate dielectric layer;
• depositing and etching a dielectric masking layer on the undoped a-Si layer;
• depositing a doped a-Si layer on the undoped a-Si layer and the dielectric masking layer;
• etching the doped and undoped a-Si layers to define the TFT region and the pixel region;
• depositing a reflective metal layer on the doped a-Si layer;
• etching the reflective metal layer for coverage over the dielectric masking layer;
• recrystallizing a portion of the doped and undoped a-Si layers into a doped polysilicon layer;
• depositing a source metal layer on a portion of the doped polysilicon layer;
• etching a portion of the metal reflective layer;
• depositing a dark polyimide layer over the source metal layer, the dielectric masking layer and the doped polysilicon layer;
• and
• etching the dark polyimide layer from the polysilicon layer in the pixel region.

A method for fabricating a silicon pixel electrode having a pixel area for a liquid crystal display, comprising:

• depositing and etching a gate metal layer on a display glass substrate;
• depositing a gate dielectric layer on the gate metal layer and the glass substrate;
• depositing an undoped a-Si layer for the silicon pixel electrode and a TFT, on the gate dielectric layer;
• depositing and etching a dielectric masking layer on the undoped a-Si layer covering a channel area of the TFT;
• depositing and etching a reflective metal layer on the dielectric masking layer to protect the channel area of the TFT;
• doping and recrystallizing, approximately simultaneously, a portion of the undoped a-Si layer into a doped polysilicon layer;
• depositing a source metal layer on a portion of the doped polysilicon layer;
• etching away a portion of the reflective metal layer;
• depositing a dark polyimide on the source metal layer, dielectric masking layer and doped polysilicon layer;
• and
• etching the dark polyimide layer from the polysilicon layer in the pixel area.

A liquid crystal display comprising a plurality of pixels on a glass substrate, wherein each pixel comprises:

• a gate metal layer formed on a first portion of the glass substrate;
• a gate dielectric layer formed on the gate metal layer and on a second portion of the glass substrate;
• an a-Si layer formed on a first portion of the gate dielectric layer and proximate to the gate metal layer;
• a doped polysilicon pixel electrode layer formed on a second portion of the gate dielectric layer;
• a dielectric masking layer formed on the a-Si layer;
• a polysilicon non-pixel electrode layer formed on a third portion of the gate dielectric layer;
• a source metal layer formed on the polysilicon non-pixel electrode;
• and
• a dark polyimide layer formed on the dielectric masking layer and on the source metal layer.

A liquid crystal display pixel comprising:

• a glass substrate;
• a metal gate layer formed on a first portion of said glass substrate;
• a gate dielectric layer formed on said metal gate layer and on a second portion of said glass substrate;
• an amorphous silicon channel layer formed on a first portion of said gate dielectric layer and located proximate to said metal gate layer;
• a polysilicon source layer formed adjacent to said amorphous silicon channel layer;
• a polysilicon drain layer formed adjacent to said amorphous silicon channel layer;
• and
• a doped polysilicon pixel electrode layer formed on a second portion of said gate dielectric layer.

A method for fabricating a silicon pixel electrode for a liquid crystal display, comprising:

• forming a gate metal layer on a first portion of a glass substrate;
• forming a gate dielectric layer on the gate metal layer and on a second portion of the glass substrate;
• forming an amorphous silicon channel layer on a first portion of the gate dielectric layer and located proximate to the gate metal layer;
• forming a polysilicon source layer adjacent to Said amorphous silicon channel layer;
• forming a polysilicon drain layer adjacent to said amorphous silicon channel layer;
• and
• forming a doped polysilicon pixel electrode layer on a second portion of the gate dielectric layer.