Method and apparatus for measuring electron density of plasma
AssigneeFujitsu Limited
InventorYukinobu Hikosaka
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AssigneeFujitsu Limited
InventorYukinobu Hikosaka
Estimating the term…
A method for measuring electron density n.sub.p of a plasma in a plasma reaction chamber for semiconductor fabrication processes is capable of an accurate measurement without time-drifting of measuring values and metal contamination to semiconductor wafers. The method comprises injecting electrons in the plasma to generate a plasma oscillation, getting a plasma oscillation frequency .omega..sub.p by antenna and frequency analyzer, and easily computing n.sub.p by a well-known formula using the value of .omega..sub.p. A plasma generating apparatus for semiconductor fabrication processes is capable of keeping the electron density in a plasma reaction chamber constant. The apparatus comprises feed-back circuits for feeding back a deviation signal of the computed (n.sub.p) from a presetting value to an RF oscillator or a gas control unit so as to control RF power or pressure of a source gas, respectively.
A method for measuring electron density of a plasma in a plasma reaction chamber comprising the steps of:
An apparatus for measuring electron density of a plasma in a plasma reaction chamber comprises:
An apparatus for measuring electron density of a plasma in a plasma reaction chamber comprising:
Dependencies are inferred from the claim text.