Semiconductor metal contacting structure and a light emitting device

A semiconductor metal contacting structure comprising:

• a first n-type compound semiconductor layer;
• a second n-type compound semiconductor layer on said first n-type compound semiconductor layer;
• a contacting metal on said second n-type compound semiconductor layer;
• a multiquantum well layer in a depletion layer produced between said first n-type compound semiconductor layer and said second n-type compound semiconductor layer, wherein said first n-type compound semiconductor layer having an impurity concentration which is higher in a portion adjacent to an interface between said first n-type compound semiconductor layer and said second n-type compound semiconductor layer than in a portion spaced from said interface.

A light emitting device comprising:

• a substrate;
• an n-type cladding layer on said substrate;
• an active layer on said n-type cladding layer;
• a p-type cladding layer on said active layer;
• and
• a semiconductor metal contacting structure, wherein said semiconductor metal contacting structure comprises a first p-type compound semiconductor layer;
• a second p-type compound semiconductor layer on said first p-type compound semiconductor layer;
• a contacting metal on said second p-type compound semiconductor layer;
• a multiquantum well layer in a depletion layer produced between said first p-type compound semiconductor layer and said second p-type compound semiconductor layer, said multiquantum well layer having a plurality of quantum wells and a plurality of barriers, at least one of said quantum wells and said barriers having a different thickness.