Method of manufacturing semiconductor device
AssigneeNEC Corporation
InventorYoshiaki Yamada
Life of this patent
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Abstract
Tungsten is grown only within a viahole 10. The upper surface of the tungsten layer 3 is made lower than the upper surface of a silicon oxide film 2. Thereafter, a titanium film 4 and a titanium nitride film 5 are formed by sputtering, and an aluminum alloy film 6 is formed by the sputtering while a silicon substrate 1 is heated to the temperature of 400 through 550 degrees Centigrade. Since the thickness of the tungsten layer 3 is thinner than the depth of the viahole 10, the upper layer wiring cannot be shorted by the tungsten layer 3. Further, since the viahole which remains not completely filled by the tungsten is completely filled with the tungsten layer 3 and the aluminum alloy film 6, no wire disconnection cannot occur in the viahole 10.
Claims39
A method of manufacturing a semiconductor device comprising the steps of:
- forming a hole at an interlayer insulating film on a semiconductor substrate so as to reach a lower layer wiring or the semiconductor substrate, said hole having a depth greater than the size thereof measured along the surface of said insulating film;
- embedding a first electrically conductive material into said hole to form a first electrically conductive layer so as to make the upper surface of the first electrically conductive layer lower than the upper surface of said insulating film and to make the difference in height between the upper surface of the insulating film and the upper surface of the first electrically conductive layer smaller than said size of the hole;
- and
- then embedding a second electrically conductive material having a melting point lower than said first electrically conductive material into said hole to form a second electrically conductive layer on said first electrically conductive layer, thereby said hole becomes completely filled with the first and second electrically conductive layers while said semiconductor substrate is heated to a sufficiently high temperature to fluidize the second electrically conductive material.
A method of manufacturing a semiconductor device comprising the steps of:
- embedding a high melting point metal layer into a hole reaching an electrically conductive element of semiconductor substrate or a lower layer wiring, said hole being provided at an interlayer insulating film lying on the semiconductor substrate and having a depth greater than the size thereof measured along the surface of said insulating film, so as to make the upper surface of said high melting point metal layer lower than the upper surface of said insulating film and to make the difference in height between the Upper surface of the insulating film and the upper surface of the first electrically conductive layer smaller than said size of the hole;
- and
- forming an aluminum alloy film by a sputtering method in such a condition that said semiconductor substrate is heated to a sufficiently high temperature to fluidize said aluminum alloy film, thereby said hole becomes completely filled with said high melting point metal layer and said aluminum alloy film.
A method of manufacturing a semiconductor device comprising the steps of:
- embedding a high melting point metal layer into a hole reaching an electrically conductive element of semiconductor substrate or a lower layer wiring, said hole being provided at an interlayer insulating film lying on the semiconductor substrate and having a depth of greater than the size thereof measured along the surface of said insulating film, so as to make the upper surface of said high melting point metal layer lower than the upper surface of said insulating film and to make the difference in height between the upper surface of the insulating film and the upper surface of the first electrically conductive layer smaller than said size of the hole;
- forming an aluminum alloy film by a sputtering method;
- and
- heating said aluminum alloy film to a sufficiently high temperature to fluidize it, thereby said hole becomes completely filled with said high melting point metal layer and said aluminum alloy film.
A method of manufacturing a semiconductor device comprising the steps of:
- forming a hole at an interlayer insulating film on a semiconductor substrate so as to reach a lower layer wiring or the semiconductor substrate, said hole having a depth of greater than the size thereof measured along the surface of said insulating film;
- embedding a first electrically conductive material into said hole to form a first electrically conductive layer so as to make the upper surface of the first electrically conductive layer lower than the upper surface of said insulating film and to make the difference in height between the upper surface of the insulating film and the upper surface of the first electrically conductive layer smaller than said size of the hole;
- forming a film of a second electrically conductive material having a melting point lower than said first electrically conductive material;
- and
- then heating said semiconductor substrate to a sufficiently high temperature to fluidize the film of the second electrically conductive material to embed the second electrically conductive material into said hole to form a second electrically conductive layer on said first electrically conductive layer, thereby said hole becomes completely filled with the first and second electrically conductive layers.
Dependencies are inferred from the claim text.