Method of manufacturing semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorsKyoichi Suguro, Haruo Okano
Life of this patent
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Abstract
A method of manufacturing a semiconductor device includes the steps of forming a first insulating layer having a hole on a substrate, selectively forming a conductive layer in the hole, selectively forming a second insulating layer on the first insulating layer, patterning the second insulating layer, and forming an interconnection layer in an opening portion of the second insulating layer formed by patterning so as to be electrically connected to the conductive layer.
Claims9
A method of manufacturing a semiconductor device, comprising the steps of:
- forming an insulating layer on a substrate;
- patterning said insulating layer;
- and
- forming a first conductive layer of a first material on said substrate and simultaneously forming a second conductive layer of said first material on said insulating layer by a directional chemical vapor deposition.
A method of manufacturing a semiconductor device, comprising the steps of:
- forming an insulating layer on a substrate;
- patterning said insulating layer;
- forming a gate insulating film on an exposed portion of said substrate;
- forming a first conductive layer of a first material on said gate insulating film and simultaneously forming a second conductive layer of said first material on said insulating layer by a directional chemical vapor deposition;
- removing said insulating layer to lift-off said second conductive layer on said insulating layer;
- and
- directionally diffusing an impurity in the substrate using said first conductive layer as a mask to form source and drain regions.
Dependencies are inferred from the claim text.