Method of manufacturing buried heterostructure semiconductor laser
AssigneeNippon Telegraph and Telephone Corporation
InventorYasuhiro Kondo
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Abstract
According to a method of manufacturing a buried heterostructure semiconductor laser, an active layer and a p-type cladding layer are sequentially deposited on an n-type group III-V semiconductor substrate by metalorganic vapor phase epitaxy. A surface of the deposited layer is masked in a stripe shape, and the cladding layer, the active layer, and the semiconductor substrate are selectively and partially etched to form a mesa structure. A p-type current blocking layer, an n-type current confining layer containing a group VI dopant having a concentration of not less than 5.times.10.sup.18 atoms.multidot.cm.sup.-3, a p-type cladding layer, and a p-type cap layer are sequentially deposited on an entire upper surface of the mesa structure by the metalorganic vapor phase epitaxy.
Claims22
A method of manufacturing a buried heterostructure semiconductor laser, comprising the steps of:
- sequentially depositing an active layer and a p-type cladding layer on an n-type group III-V semiconductor substrate by metalorganic vapor phase epitaxy;
- masking a surface of said deposited layer in a stripe shape and selectively and partially etching said cladding layer, said active layer, and part of said semiconductor substrate to form a mesa structure;
- and
- sequentially depositing a p-type current blocking layer, an n-type current confining layer containing a group VI dopant having a concentration of not less than 5.times.10.sup.18 atoms.multidot.cm.sup.-3, a p-type cladding layer, and a p-type cap layer on an entire upper surface of said mesa structure by the metalorganic vapor phase epitaxy.
A method of manufacturing a buried heterostructure semiconductor laser, comprising the steps of:
- sequentially depositing an active layer, a p-type cladding layer, and a p-type cap layer on n-type group III-V semiconductor substrate by the metalorganic vapor phase epitaxy;
- masking a surface of said deposited layer in a stripe shape and selectively and partially etching said cap layer, said cladding layer, said active layer, and part of said semiconductor substrate to form a mesa structure;
- and
- sequentially depositing a p-type current blocking layer, an n-type current confining layer containing a group VI dopant having a concentration of not less than 5.times.10.sup.18 atoms.multidot.cm.sup.-3 by the metalorganic vapor phase epitaxy to form current constraint and optical confinement layers.
A method of manufacturing a buried heterostructure semiconductor laser, comprising the steps of:
- depositing an active layer on an n-type group III-V semiconductor substrate by metalorganic vapor phase epitaxy;
- masking a surface of said active layer in a stripe shape and selectively partially etching said active layer and part of said semiconductor substrate to form a mesa structure;
- and
- removing said mask on the upper layer of said mesa structure, and depositing a p-type current blocking layer, an n-type current confining layer containing a group VI dopant having a concentration of not less than 5.times.10.sup.18 atoms.multidot.cm.sup.-3, a p-type cladding layer, and a p-type cap layer on an entire surface of the resultant structure by the metalorganic vapor phase epitaxy.
A method of manufacturing a buried heterostructure semiconductor laser, comprising the steps of:
- depositing an active layer on an n-type group III-V semiconductor substrate by metalorganic vapor phase epitaxy;
- growing said active layer, growing an optical waveguide layer, and forming a diffraction grating in said optical waveguide layer;
- masking the surface of said optical waveguide layer in a stripe shape after the diffraction grating is formed, and selectively and partially etching said optical waveguide layer, said active layer, and part of said semiconductor substrate to form a mesa structure;
- and
- removing said mask on the upper layer of said mesa structure, and depositing a p-type current blocking layer, an n-type current confining layer containing a group VI dopant having a concentration of not less than 5.times.10.sup.18 atoms.multidot.cm.sup.-3, and a p-type cladding layer, and a p-type cap layer on an entire surface of the resultant structure by the metalorganic vapor phase epitaxy.
Dependencies are inferred from the claim text.